MBRS320TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES Small foot print, surface mountable Very low forward voltage drop RoHS COMPLIANT High frequency operation Guard ring for enhanced ruggedness and long term reliability Cathode Anode Lead (Pb)-free (PbF suffix) SMC Designed and qualified for industrial level DESCRIPTION The MBRS320TRPbF surface mount Schottky rectifier has PRODUCT SUMMARY been designed for applications requiring low forward drop I 3.0 A F(AV) and small foot prints on PC boards. Typical applications are V 20 V R in disk drives, switching power supplies, converters, I 35 mA at 125 C RM freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 20 V RRM I t = 5 s sine 820 A FSM p V 3.0 Apk, T = 125 C 0.36 V F J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL MBRS320TRPbF UNITS Maximum DC reverse voltage V R 20 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 136 C, rectangular waveform 3.0 F(AV) L Following any rated 5 s sine or 3 s rect. pulse 820 A Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 80 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 8 mH 4 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94320 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 15-Aug-08 1 MBRS320TRPbF Schottky Rectifier, 3.0 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 3 A 0.41 0.45 T = 25 C J 6 A 0.45 0.53 (1) Maximum forward voltage drop V V FM 3 A 0.29 0.36 T = 125 C J 6 A 0.35 0.46 T = 25 C 0.04 0.5 J (1) Maximum reverse leakage current I T = 100 C V = Rated V 8.0 20 mA RM J R R T = 125 C 23 35 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 360 - pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 3.0 - nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 65 to 150 C J Stg temperature range Maximum thermal resistance, (2) R DC operation 12 thJL junction to lead C/W Maximum thermal resistance, R 46 thJA junction to ambient 0.24 g Approximate weight 0.008 oz. Marking device Case style SMC (similar to DO-214AB) V32 Notes dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 94320 2 Revision: 15-Aug-08