MBRS1540T3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a www.onsemi.com metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low SCHOTTKY BARRIER voltage, high frequency switching power supplies free wheeling diodes and polarity protection diodes. RECTIFIER 1.5 AMPERES, 40 VOLTS Features Compact Package with JBend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction GuardRing for OverVoltage Protection Low Forward Voltage Drop SMB These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 403A Compliant Mechanical Characteristics MARKING DIAGRAM Case: Molded Epoxy Epoxy Meets UL 94 V0 0.125 in AYWW Weight: 95 mg (Approximately) BGJ Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds BGJ = Specific Device Code A = Assembly Location Finish: All External Surfaces Corrosion Resistant and Terminal Y = Year Leads are Readily Solderable WW = Work Week = PbFree Package MAXIMUM RATINGS (Note: Microdot may be in either location) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM ORDERING INFORMATION DC Blocking Voltage V R Device Package Shipping Average Rectified Forward Current I 1.5 A O (At Rated V , T = 100C) R C MBRS1540T3G SMB 2500/Tape & Reel Peak Repetitive Forward Current I 3.0 A (PbFree) FRM (At Rated V , Square Wave, R For information on tape and reel specifications, 100 kHz, T = 105C) C including part orientation and tape sizes, please NonRepetitive Peak Surge Current I 40 A refer to our Tape and Reel Packaging Specification FSM Brochure, BRD8011/D. (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +125 C J Voltage Rate of Change dv/dt 10,000 V/ s (Rated V , T = 25C) R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: February, 2018 Rev. 4 MBRS1540T3/DMBRS1540T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 1) R 24 JL Thermal Resistance, JunctiontoAmbient (Note 2) R 80 JA ELECTRICAL CHARACTERISTICS v T = 25C T = 125C V F J J Maximum Instantaneous Forward Voltage (Note 3) 0.46 0.39 (i = 1.5 A) F 0.54 0.54 see Figure 2 (i = 3.0 A) F I T = 25C T = 100C mA R J J Maximum Instantaneous Reverse Current (Note 3) 0.8 5.7 (V = 40 V) R 0.1 1.6 see Figure 4 (V = 20 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2