X-On Electronics has gained recognition as a prominent supplier of MBRF10100CT-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRF10100CT-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRF10100CT-E3/4W Vishay

MBRF10100CT-E3/4W electronic component of Vishay
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Part No.MBRF10100CT-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 100 Volt 10A Single TrenchMOS
Datasheet: MBRF10100CT-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.287 ea
Line Total: USD 1.29 
Availability - 121
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
121
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.287
10 : USD 1.0494
100 : USD 0.8162
500 : USD 0.6919
1000 : USD 0.5324
2000 : USD 0.5214
5000 : USD 0.5126
10000 : USD 0.5104
25000 : USD 0.5082

   
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We are delighted to provide the MBRF10100CT-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRF10100CT-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRF1090CT-M3, MBRF10100CT-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS Trench MOS Schottky technology Lower power losses, high efficiency ITO-220AB Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency rectifier of switching mode power PIN 3 supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 2 x 5.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 90 V, 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 120 A FSM commercial grade V 0.75 V F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package ITO-220AB M3 suffix meets JESD 201 class 1A whisker test Circuit configuration Common cathode Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT Max. repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Max. DC blocking voltage V 90 100 V DC total device 10 Max. average forward rectified current at T = 105 C I A C F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load per diode Non-repetitive avalanche energy E 60 mJ AS at T = 25 C, L = 60 mH per diode J Peak repetitive reverse current at t = 2 s, 1 kHz, p I 0.5 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V) dV/dt 10 000V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG Isolation voltage from terminal to heatsink with t = 1 min V 1500 V AC Revision: 19-Mar-18 Document Number: 89126 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBRF1090CT-M3, MBRF10100CT-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL MBRF1090CT MBRF10100CT UNIT I = 5.0 A T = 125 C 0.75 Maximum instantaneous forward voltage F C V V F (1) per diode I = 5.0 A T = 25 C 0.85 F C T = 25 C 100 A Maximum reverse current per diode at J I R (2) working peak reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT Typical thermal resistance per diode R 6.8 C/W JC ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB MBRF10100CT-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 12 120 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 10 100 8 80 6 60 4 40 2 20 Mounted on Specific Heatsink 0 0 0525075 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Mar-18 Document Number: 89126 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Peak Forward Surge Current (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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