MBRF1090CT-M3, MBRF10100CT-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS Trench MOS Schottky technology Lower power losses, high efficiency ITO-220AB Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency rectifier of switching mode power PIN 3 supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 2 x 5.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 90 V, 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 120 A FSM commercial grade V 0.75 V F Terminals: Matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package ITO-220AB M3 suffix meets JESD 201 class 1A whisker test Circuit configuration Common cathode Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT Max. repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Max. DC blocking voltage V 90 100 V DC total device 10 Max. average forward rectified current at T = 105 C I A C F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 120 A FSM superimposed on rated load per diode Non-repetitive avalanche energy E 60 mJ AS at T = 25 C, L = 60 mH per diode J Peak repetitive reverse current at t = 2 s, 1 kHz, p I 0.5 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V) dV/dt 10 000V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG Isolation voltage from terminal to heatsink with t = 1 min V 1500 V AC Revision: 19-Mar-18 Document Number: 89126 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBRF1090CT-M3, MBRF10100CT-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL MBRF1090CT MBRF10100CT UNIT I = 5.0 A T = 125 C 0.75 Maximum instantaneous forward voltage F C V V F (1) per diode I = 5.0 A T = 25 C 0.85 F C T = 25 C 100 A Maximum reverse current per diode at J I R (2) working peak reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT Typical thermal resistance per diode R 6.8 C/W JC ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB MBRF10100CT-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 12 120 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 10 100 8 80 6 60 4 40 2 20 Mounted on Specific Heatsink 0 0 0525075 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Mar-18 Document Number: 89126 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Peak Forward Surge Current (A)