MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current 2 2 High forward surge capability 1 1 High frequency operation MBR10H100 MBRF10H100 PIN 1 PIN 1 Meets MSL level 1, per J-STD-020, LF maximum peak of CASE PIN 2 245 C (for TO-263AB package) PIN 2 2 D PAK (TO-263AB) Solder bath temperature 275 C maximum, 10 s, per K JESD 22-B106 (for TO-220AC and ITO-220AC package) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 1 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode MBRB10H100 PIN 1 K power supplies, freewheeling diodes, DC/DC converters, or PIN 2 HEATSINK polarity protection application. click logo to get started DESIGN SUPPORT TOOLS MECHANICAL DATA 2 Case: TO-220AC, ITO-220AC, D PAK (TO-263AB) Models Molding compound meets UL 94 V-0 flammability rating Available Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per PRIMARY CHARACTERISTICS J-STD-002 and JESD 22-B102 I 10 A F(AV) E3 suffix meets JESD 201 class 1A whisker test V 100 V RRM Polarity: as marked I 250 A FSM Mounting Torque: 10 in-lbs maximum V 0.64 V F I 4.5 A R T max. 175 C J 2 Package TO-220AC, ITO-220AC, D PAK (TO-263AB) Circuit configurations Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR10H100 UNIT Maximum repetitive peak reverse voltage V 100 RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 DC Maximum average forward rectified current I 10 F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 250 A FSM Peak repetitive reverse current at t = 2.0 s, 1 kHz I 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 08-Jun-2018 Document Number: 88667 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 10 A T = 25 C 0.77 F C I = 10 A T = 125 C 0.64 F C (1) Maximum instantaneous forward voltage V V F I = 20 A T = 25 C 0.88 F C I = 20 A T = 125 C 0.73 F C T = 25 C 4.5 A J (2) Maximum reverse current I Rated V R R T = 125 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance R 2.7 5.8 2.7 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10H100-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF10H100-E3/45 1.94 45 50/tube Tube TO-263AB MBRB10H100-E3/45 1.33 45 50/tube Tube TO-263AB MBRB10H100-E3/81 1.33 81 800/reel Tape and reel Revision: 08-Jun-2018 Document Number: 88667 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000