MBR(F,B)2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES TO-220AB ITO-220AB Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation 3 3 2 2 1 Meets MSL level 1, per J-STD-020C, LF maximum 1 MBR20xxCT MBRF20xxCT peak of 245 C (for TO-263AB package) PIN 1 PIN 2 PIN 1 PIN 2 Solder dip 260 C, 40 s (for TO-220AB and CASE PIN 3 PIN 3 ITO-220AB package) TO-263AB Component in accordance to RoHS 2002/95/EC K and WEEE 2002/96/EC TYPICAL APPLICATIONS 2 For use in low voltage, high frequency rectifier of 1 MBRB20xxCT switching mode power supplies, freewheeling diodes, PIN 1 K dc-to-dc converters or polarity protection application. PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB PRIMARY CHARACTERISTICS Epoxy meets UL 94V-0 flammability rating I 10 A x 2 F(AV) Terminals: Matte tin plated leads, solderable per V 35 V to 60 V J-STD-002B and JESD22-B102D RRM E3 suffix for commercial grade, meets JESD 201 class I 150 A FSM 1A whisker test, HE3 suffix for high reliability grade V 0.57 V, 0.70 V F (AEC Q101 qualified), meets JESD 201 class 2 T max. 150 C J whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 V DC Maximum average forward rectified total device 20 I A F(AV) current at T = 135 C per diode 10 C Peak forward surge current 8.3 ms single half I 150 A FSM sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at I 1.0 0.5 A RRM t = 2 s, 1 kHz p Voltage rate of change (rated V) dV/dt 10000 V/s R Operating junction temperature range T - 65 to + 150 C J Storage temperature range T - 65 to + 175 C STG Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min Document Number: 88674 www.vishay.com Revision: 08-Nov-07 1 MBR(F,B)2035CT thru MBR(F,B)2060CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONSSYMBOLMBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT I = 10 A T = 25 C 0.65 0.80 F C Maximum instantaneous I = 10 A T = 125 C 0.57 0.70 F C V V (1) F forward voltage per diode I = 20 A T = 25 C 0.84 0.95 F C I = 20 A T = 125 C 0.72 0.85 F C Maximum reverse current T = 25 C 0.1 0.15 C per diode at rated DC I mA R T = 125 C 15 15 (1) C blocking voltage per diode Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical resistance from junction to case per diode R 2.0 5.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR2045CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF2045CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB2045CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB2045CT-E3/81 1.35 81 800/reel Tape reel (1) TO-220AB MBR2045CTHE3/45 1.85 45 50/tube Tube (1) ITO-220AB MBRF2045CTHE3/45 1.99 45 50/tube Tube (1) TO-263AB MBRB2045CTHE3/45 1.35 45 50/tube Tube (1) TO-263AB MBRB2045CTHE3/81 1.35 81 800/reel Tape reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 20 160 Resistive or Inductive Load T = T max. J J 8.3 ms Single Half Sine-Wave 140 16 120 12 100 8 80 4 60 0 40 0 50 100 150 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com Document Number: 88674 Revision: 08-Nov-07 2 Average Forward Current (A) Peak Forward Surge Current (A)