MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop Low leakage current High forward surge capability 3 3 2 2 1 High frequency operation 1 MBR30HxxCT MBRF30HxxCT Meets MSL level 1, per J-STD-020, LF maximum peak of PIN 1 PIN 2 PIN 1 PIN 2 245 C (for TO-263AB package) CASE PIN 3 PIN 3 Solder bath temperature 275 C maximum, 10 s, per TO-263AB JESD 22-B106 (for TO-220AB and ITO-220AB package) K AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 A Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 1 MBRB30HxxCT TYPICAL APPLICATIONS PIN 1 K For use in low voltage, high frequency rectifier of switching PIN 2 HEATSINK mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB, ITO-220AB, TO-263AB I 2 x 15 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 35 V to 60 V RRM Base P/N-E3 - RoHS-compliant, commercial grade I 150 A FSM Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified V 0.56 V, 0.59 V Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified F ( X denotes revision code, e.g. A, B, ...) I 80 A, 60 A R Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 TO-220AB, ITO-220AB, Package E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix TO-263AB meets JESD 201 class 2 whisker test Diode variations Dual common cathode Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 V DC total device 30 Maximum average forward rectified I A F(AV) current (fig. 1) per diode 15 Peak forward surge current 8.3 ms single half I 150 A FSM sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode I 1.0 0.5 A RRM at t = 2 s, 1 kHz p Peak non-repetitive reverse energy E 25 20 mJ RSM (8/20 s waveform) Revision: 20-Nov-15 Document Number: 88866 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT www.vishay.com Vishay General Semiconductor MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT Non-repetitive avalanche energy per diode E 80 mJ AS at 25 C, I = 4 A, L = 10 mH AS Electrostatic discharge capacitor voltage human V 25 kV C body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated V) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A MBR30H35CT MBR30H50CT PARAMETER TEST CONDITIONS SYMBOL UNIT MBR30H45CT MBR30H60CT I = 15 A T = 25 C -0.62- 0.68 F C I = 15 A T = 125 C 0.49 0.56 0.55 0.59 Maximum instantaneous forward voltage F C V V F (1) per diode I = 30 A T = 25 C - 0.73 - 0.83 F C I = 30 A T = 125 C 0.62 0.67 0.68 0.71 F C T = 25 C - 80 - 60 A J Maximum reverse current per diode at I (2) R working peak reverse voltage T = 125 C 5.0 15 4.0 15 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBRMBRFMBRBUNIT Typical thermal resistance junction to R 1.5 4.5 1.5 C/W JC case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H45CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF30H45CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB30H45CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H45CT-E3/81 1.35 81 800/teel Tape and reel (1) TO-220AB MBR30H45CTHE3/45 1.85 45 50/tube Tube (1) ITO-220AB MBRF30H45CTHE3/45 1.99 45 50/tube Tube (1) TO-263AB MBRB30H45CTHE3/45 1.35 45 50/tube Tube (1) TO-263AB MBRB30H45CTHE3/81 1.35 81 800/teel Tape and reel (1) TO-263AB MBRB30H45CTHE3 A/P 1.35 P 50/tube Tube (1) TO-263AB MBRB30H45CTHE3 A/I 1.35 I 800/teel Tape and reel Note (1) AEC-Q101 qualified Revision: 20-Nov-15 Document Number: 88866 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000