VS-MBRB735PbF, VS-MBRB745PbF Vishay High Power Products Schottky Rectifier, 7.5 A FEATURES 150 C T operation J Base cathode High frequency operation 2 Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 Guard ring for enhanced ruggedness and long 2 Anode D PAK N/C term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified PRODUCT SUMMARY I 7.5 A F(AV) DESCRIPTION V 35 V/45 V R The VS-MBRB7... Schottky rectifier series has been I 15 mA at 125 C RM optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 7.5 A F(AV) V 35/45 V RRM I t = 5 s sine 690 A FSM p V 7.5 Apk, T = 125 C 0.57 V F J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRB735PbF VS-MBRB745PbF UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 131 C, rated V 7.5 F(AV) C R Following any rated load condition 5 s sine or 3 s rect. pulse 690 A and with rated V applied Non-repetitive peak surge current I RRM FSM Surge applied at rated load condition halfwave single phase 60 Hz 150 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 3.5 mH 7 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94312 For technical questions, contact: diodestech vishay.com www.vishay.com Revision: 16-Mar-10 1 VS-MBRB735PbF, VS-MBRB745PbF Schottky Rectifier, 7.5 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 7.5 A 0.57 V FM T = 125 C J 15 A 0.72 T = 25 C 0.1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 400 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 3.0 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBRB735 2 Marking device Case style D PAK MBRB745 www.vishay.com For technical questions, contact: diodestech vishay.com Document Number: 94312 2 Revision: 16-Mar-10