VS-MBRD650CTPbF, VS-MBRD660CTPbF Vishay Semiconductors Schottky Rectifier, 2 x 3 A Base FEATURES common Popular D-PAK outline cathode 4 Center tap configuration Small foot print, surface mountable Low forward voltage drop High frequency operation 2 Common Guard ring for enhanced ruggedness and long term cathode D-PAK (TO-252AA) 13 reliability Anode Anode Compliant to RoHS Directive 2002/95/EC Meets MSL level 1, per J-STD-020, LF maximum peak of PRODUCT SUMMARY 260 C Package D-PAK (TO-252AA) I 2 x 3 A F(AV) DESCRIPTION V 50 V, 60 V R The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface mount, center tap, Schottky rectifier series has been V at I 0.65 V F F designed for applications requiring low forward drop and I 15 mA at 125 C RM small foot prints on PC boards. Typical applications are in T max. 150 C J disk drives, switching power supplies, converters, Diode variation Common cathode freewheeling diodes, battery charging, and reverse battery E 6 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 6 A F(AV) V 50/60 V RRM I t = 5 s sine 490 A FSM p V 3 Apk, T = 125 C (per leg) 0.65 V F J T Range - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRD650CTPbF VS-MBRD660CTPbF UNITS Maximum DC reverse voltage V R 50 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 3.0 forward current I 50 % duty cycle at T = 128 C, rectangular waveform F(AV) C per device 6 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 490 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 75 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-MBRD650CTPbF, VS-MBRD660CTPbF Schottky Rectifier, 2 x 3 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.7 T = 25 C J 6 A 0.9 Maximum forward voltage drop per leg (1) V V FM See fig. 1 3 A 0.65 T = 125 C J 6 A 0.85 T = 25 C 0.1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 145 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range per leg 6 Maximum thermal resistance, DC operation R thJC junction to case See fig. 4 per device 3 C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. MBRD650CT Marking device Case style D-PAK (similar to TO-252AA) MBRD660CT Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94314 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11