MBRF1090, MBRF10100 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS Trench MOS Schottky technology ITO-220AC Low power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 2 Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 MBRF1090 MBRF10100 PIN 1 TYPICAL APPLICATIONS PIN 2 For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AC I 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 90 V, 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 150 A FSM commercial grade V at I = 10 A 0.65 V F F Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AC Polarity: as marked Circuit configuration Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF1090 MBRF10100 UNIT Maximum repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current at T = 133 C I 10 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Voltage rating of change (rated V ) dV/dt 10 000 V/s R Isolation voltage from termal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -65 to +150 C J STG Revision: 22-Mar-18 Document Number: 89320 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBRF1090, MBRF10100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT T = 25 C 0.80 C I = 10 A F (1) Maximum instantaneous forward voltage V 0.65 V F T = 125 C C I = 20 A 0.75 F T = 25 C 100 A J Maximum reverse current (2) I R at working peak reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRF UNIT Typical thermal resistance per diode R 3.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AC MBRF10100-M3/4W 1.384 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 10 160 Resistive or Inductive Load T = T max. J J 8.3 ms Single Half Sine-Wave 140 8 120 6 100 4 80 2 60 40 0 50 150 0 100 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetititve Peak Forward Surge Current Revision: 22-Mar-18 Document Number: 89320 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)