X-On Electronics has gained recognition as a prominent supplier of MBRF10H100CT-E3/45 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRF10H100CT-E3/45 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRF10H100CT-E3/45 Vishay

MBRF10H100CT-E3/45 electronic component of Vishay
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Part No.MBRF10H100CT-E3/45
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Vishay Semiconductors Schottky Diodes & Rectifiers 100 Volt 10A Dual Common-Cathode
Datasheet: MBRF10H100CT-E3/45 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.771 ea
Line Total: USD 1.77 
Availability - 452
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
452
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.771
10 : USD 1.474
100 : USD 1.265
1000 : USD 0.8459
2000 : USD 0.8228
5000 : USD 0.8085
10000 : USD 0.7865
25000 : USD 0.7821

   
Manufacturer
Product Category
RoHS - XON
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Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Height
Length
Operating Temperature Range
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We are delighted to provide the MBRF10H100CT-E3/45 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRF10H100CT-E3/45 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current 3 3 2 High forward surge capability 2 1 1 High frequency operation MBR10H100CT MBRF10H100CT PIN 1 PIN 2 PIN 1 PIN 2 Meets MSL level 1, per J-STD-020, LF maximum peak of CASE PIN 3 245 C (for TO-263AB package) PIN 3 2 D PAK (TO-263AB) Solder bath temperature 275 C maximum, 10 s, per K JESD 22-B106 (for TO-220AB and ITO-220AB package) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 1 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode MBRB10H100CT PIN 1 K power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PIN 2 HEATSINK MECHANICAL DATA click logo to get started DESIGN SUPPORT TOOLS 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Models Available Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per PRIMARY CHARACTERISTICS J-STD-002 and JESD 22-B102 I 2 x 5 A E3 suffix meets JESD 201 class 1A whisker test F(AV) V 100 V RRM Polarity: as marked I 150 A FSM Mounting Torque: 10 in-lbs maximum V 0.61 V F I 3.5 A R T max. 175 C J 2 Package TO-220AC, ITO-220AC, D PAK (TO-263AB) Circuit configurations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR10H100CT UNIT Maximum repetitive peak reverse voltage V 100 RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 DC total device 10 Maximum average forward rectified current I F(AV) at T = 105 C C per diode 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I 150 FSM Peak repetitive reverse current per diode at t = 2.0 s, 1 kHz I 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 08-Jun-2018 Document Number: 88668 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 5 A T = 25 C 0.76 F J I = 5 A T = 125 C 0.61 F J (1) Maximum instantaneous forward voltage per diode V V F I = 10 A T = 25 C 0.85 F J I = 10 A T = 125 C 0.71 F J T = 25 C 3.5 A J (1) Maximum reverse current per diode I Rated V R R T = 100 C 4.5 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode R 2.2 5.2 2.2 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF10H100CT-E3/45 1.79 45 50/tube Tube TO-263AB MBRB10H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB10H100CT-E3/81 1.35 81 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 12 175 T = T Max. J J MBR, MBRB 8.3 ms Single Half Sine-Wave 10 150 8 125 6 100 MBRF 4 75 2 50 0 25 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 08-Jun-2018 Document Number: 88668 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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