MBRB7xx www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES 2 D PAK (TO-263AB) Power pack Guardring for overvoltage protection K Low power loss, high efficiency Low forward voltage drop High forward surge capability 2 High frequency operation 1 Meets MSL level 1, per J-STD-020, LF maximum peak MBRB7xx of 245 C PIN 1 K AEC-Q101 qualified PIN 2 HEATSINK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage, high frequency rectifier of switching I 7.5 A F(AV) mode power supplies, freewheeling diodes, DC/DC V 35 V to 60 V RRM converters, and polarity protection application. I 150 A FSM MECHANICAL DATA V 0.57 V, 0.65 V F 2 Case: D PAK (TO-263AB) T max. 150 C J 2 Molding compound meets UL 94 V-0 flammability rating Package D PAK (TO-263AB) Base P/N-E3 - RoHS-compliant, commercial grade Diode variations Single Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified ( X denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB735 MBRB745 MBRB750 MBRB760 UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 RRM Working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 DC Maximum average forward rectified current (fig. 1) I 7.5 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T -65 to +150 J C Operating storage temperature range T -65 to +175 STG Revision: 28-Nov-17 Document Number: 87594 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBRB7xx www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MBRB735 MBRB745 MBRB750 MBRB760 UNIT I = 7.5 A T = 25 C - 0.75 F C I = 7.5 A T = 125 C 0.57 0.65 F C Maximum instantaneous (1) V V F forward voltage I = 15 A T = 25 C 0.84 - F C I = 15 A T = 125 C 0.72 - F C T = 25 C 0.1 0.5 Maximum reverse current at C (2) I Rated V mA R R DC blocking voltage T = 125 C 15 50 C Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB UNIT Typical thermal resistance from junction to case R 3.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB MBRB745-E3/45 1.33 45 50/tube Tube TO-263AB MBRB745-E3/81 1.33 81 800/reel Tape and reel (1)(2) TO-263AB MBRB745HE3 A/P 1.33 P 50/tube Tube (1)(2) TO-263AB MBRB745HE3 A/I 1.33 I 800/reel Tape and reel Note (1) AEC-Q101 qualified (2) 35 V and 50 V device available in AEC-Q101 qualified only Revision: 28-Nov-17 Document Number: 87594 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000