X-On Electronics has gained recognition as a prominent supplier of MBRB8H100T4G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRB8H100T4G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRB8H100T4G ON Semiconductor

MBRB8H100T4G electronic component of ON Semiconductor
MBRB8H100T4G ON Semiconductor
MBRB8H100T4G Schottky Diodes & Rectifiers
MBRB8H100T4G  Semiconductors

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See Product Specifications
Part No. MBRB8H100T4G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8A 100V SCHOTTKY
Datasheet: MBRB8H100T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 0.4325 ea
Line Total: USD 346 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 800
Multiples : 800
800 : USD 0.4325
1600 : USD 0.4152
2400 : USD 0.4152
3200 : USD 0.4152

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 1.2017

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3200
Multiples : 3200
3200 : USD 0.8849

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 4.4873
10 : USD 1.6244
100 : USD 1.2634
500 : USD 1.0429
800 : USD 0.8203
2400 : USD 0.7711

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 9
Multiples : 1
9 : USD 1.426
10 : USD 1.2068
25 : USD 1.1827

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 9
Multiples : 1
9 : USD 1.1567

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
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Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBRB8H100T4G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRB8H100T4G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRB8H100T4G, NBRB8H100T4G Switch-mode Schottky Power Rectifier Surface Mount Power Package MBRB8H100T4G, NBRB8H100T4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 171C 8 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 171C 16 R C Max Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25C) 250 Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase (Note 2) R 1.1 JC JunctiontoAmbient R 44 JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 8 A, T = 25C) 0.71 F J (I = 8 A, T = 125C) 0.55 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 4.5 A J (Rated dc Voltage, T = 125C) 5.3 mA J DYNAMIC CHARACTERISTICS (Per Leg) Capacitance C pF T (V = 4.0 V, T = 25C, Frequency = 1.0 MHz) 600 R C 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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