X-On Electronics has gained recognition as a prominent supplier of MBRF1645 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRF1645 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRF1645 Taiwan Semiconductor

MBRF1645 electronic component of Taiwan Semiconductor
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Part No.MBRF1645
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 16 Amp 45 Volt Single
Datasheet: MBRF1645 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.33 ea
Line Total: USD 1.33 
Availability - 529
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
529
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.33
5 : USD 1.19
17 : USD 1.064
45 : USD 1.008
100 : USD 0.98

   
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We are delighted to provide the MBRF1645 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRF1645 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRF1635 - MBRF16150 Isolated 16.0 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .406(10.3) .173(4.4) .390(9.90) .124(3.16) .134(3.4)DIA .112(2.85) .118(3.00) .113(3.0)DIA .100(2.55) .272(6.9) .248(6.3) .606(15.5) Features .583(14.8) Plastic material used carries Underwriters Laboratory Classifications 94V-0 .063(1.6) MAX Metal silicon junction, majority carrier conduction .161(4.1) Low power loss, high efficiency .146(3.7) High current capability, low forward voltage drop .110(2.8) High surge capability .055(1.4) .071(1.8) .543(13.8) .098(2.5) .043(1.1) MAX .512(13.2) For use in low voltage, high frequency inverters, free .030(0.76) .035(0.9) wheeling, and polarity protection applications .020(0.50) .020(0.5) Guardring for overvoltage protection 2 High temperature soldering guaranteed: o 260 C/10 seconds,0.25(6.35mm)from case .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Mechanical Data Case Positive Cases: ITO-220AC molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Dimensions in inches and (millimeters) Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Type Number Units 1635 1645 1650 1660 1690 16100 16150 Maximum Recurrent Peak Reverse Voltage 35 45 50 60 90 100 150 V V RRM Maximum RMS Voltage 24 31 35 42 63 70 105 V V RMS Maximum DC Blocking Voltage 35 45 50 60 90 100 150 V V DC Maximum Average Forward Rectified Current 16 A O I (AV) at Tc=125 C Peak Repetitive Forward Current (Rated V , Square R o 32 A I FRM Wave, 20KHz) at Tc=125 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC I 150 A FSM method ) Peak Repetitive Reverse Surge Current (Note 1) 1.0 0.5 A I RRM Maximum Instantaneous Forward Voltage at: o (Note 2) I =16A, T =25 C V 0.63 0.75 0.85 0.95 F C F o V I =16A, T =125 C 0.57 0.65 0.75 0.92 F C Maximum Instantaneous Reverse Current o Tc =25 C at Rated DC Blocking Voltage (Note 2) I 0.5 0.5 0.3 0.1 mA R o Tc=125 C 15 10 7.5 5.0 mA Voltage Rate of Change (Rated V ) 10,000 V/uS R dV/dt Typical Junction Capacitance Cj 500 pF o Maximum Typical Thermal Resistance(Note 3) 3.0 C/W R JC o Operating Junction Temperature Range T -65 to +150 C J o Storage Temperature Range TSTG -65 to +175 C Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 x 3 x 0.25 Al-Plate. Version: A06RATINGSANDCHARACTERISTICCURVES(MBRF1635THRUMBRF16150) FIG.1-FORWARDCURRENTDERATINGCURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 20 350 RESISTIVE OR Tj=Tj max. INDUCTIVE LOAD 8.3ms Single Half Sine Wave 300 16 JEDEC Method 250 12 200 8 150 4 100 50 0 10 100 0 50 100 150 1 o CASE TEMPERATURE.( C) NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL INSTANTANEOUS FORWARD FIG.4- TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 40 50 0 Tj=125 C 10 10 Pulse Width=300 s 1% Duty Cycle 0 Tj=125 C 1 1 0 Tj=25 C 0 Tj=25 C 0.1 0.1 MBRF1635-MBRF1645 MBRF1650-MBRF1660 MBRF1690-MBRF16150 0.01 MBRF1635-MBRF1645 MBRF1650-MBRF16150 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 6,000 100 0 Tj=25 C f=1.0MHz Vsig=50mVp-p 10 1,000 1 100 0.1 0.1 1.0 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE. (V) T, PULSE DURATION. (sec) Version: A06 JUNCTION CAPACITANCE.(pF) INSTANTANEOUS FORWARD CURRENT. (A) AVERAGEFORWARDCURRENT.(A) O PEAK FORWARD SURGE CURRENT. (A) TRANSIENT THERMAL IMPEDANCE.( C/W) INSTANTANEOUS REVERSE CURRENT. (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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