Switch-mode Power Rectifier MBR2045CTG, MBRF2045CTG Features and Benefits www.onsemi.com Low Forward Voltage Low Power Loss / High Efficiency SCHOTTKY BARRIER High Surge Capacity RECTIFIER 175C Operating Junction Temperature 20 AMPERES, 45 VOLTS 20 A Total (10 A Per Diode Leg) These Devices are PbFree and are RoHS Compliant 1 Applications 2, 4 Power Supply Output Rectification 3 Power Management Instrumentation 4 Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets UL 94, V0 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 1 1 2 2 260C Max. for 10 Seconds 3 3 ESD Rating: Human Body Model = 3B TO220AB TO220 Machine Model = C CASE 221A FULLPAK STYLE 6 CASE 221D DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 13 MBR2045CT/DMBR2045CTG, MBRF2045CTG AYWW AYWW B2045G MBR2045CTG AKA AKA TO220 FULLPAK TO220AB A = Assembly Location Y = Year WW = Work Week G = PbFree Package AKA = Diode Polarity Figure 1. Marking Diagrams MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I A F(AV) Per Device 20 Per Diode (T = 165C) 10 C Peak Repetitive Forward Current I 20 A FRM per Diode Leg (Square Wave, 20 kHz, T = 163C) C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM See Figure 13 Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR2045CTG) JunctiontoCase R 2.0 JC JunctiontoAmbient R 60 JA (MBRF2045CTG) JunctiontoCase R 4.75 JC JunctiontoAmbient R 75 JA www.onsemi.com 2