Switch-mode Power Rectifier 45 V, 20 A MBR20L45CTG, MBRF20L45CTG www.onsemi.com Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency DUAL SCHOTTKY High Surge Capacity BARRIER RECTIFIERS 150C Operating Junction Temperature 20 AMPERES, 45 VOLTS 20 A Total (10 A Per Diode Leg) 1 GuardRing for Stress Protection 2, 4 Applications 3 Power Supply Output Rectification Power Management MARKING 4 DIAGRAMS Instrumentation Mechanical Characteristics: Case: Epoxy, Molded AYWW Epoxy Meets UL 94 V0 0.125 in TO220 B20L45G Weight (Approximately): 1.9 Grams CASE 221A AKA STYLE 6 Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 Leads are Readily Solderable 3 Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube These Devices are PbFree and are RoHS Compliant* TO220 FULLPAK CASE 221D AYWW B20L45G *For additional information on our PbFree strategy and soldering details, please AKA download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 2 3 B20L45 = Device Code A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Device ORDERING INFORMATION Device Package Shipping MBR20L45CTG TO220 50 Units/Rail (PbFree) MBRF20L45CTG TO220FP 50 Units/Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 5 MBR20L45CT/DMBR20L45CTG, MBRF20L45CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 10 A F(AV) (Rated V ) T = 141C R C Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz) R Nonrepetitive Peak Surge Current I 180 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 55 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR20L45CTG) JunctiontoCase R 1.9 JC JunctiontoAmbient R 45 JA (MBRF20L45CTG) JunctiontoCase R 2.2 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 10 A, T = 25C) 0.50 F C (I = 10 A, T = 125C) 0.47 F C (I = 20 A, T = 25C) 0.63 F C (I = 20 A, T = 125C) 0.62 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.5 C (Rated DC Voltage, T = 125C) 170 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2