MBR60L45CTG, MBR60L45WTG Switchmode Power Rectifier 45 V, 60 A www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage Low Power Loss/High Efficiency RECTIFIERS High Surge Capacity 60 AMPERES, 45 VOLTS 175C Operating Junction Temperature 1 60 A Total (30 A Per Diode Leg) 2, 4 GuardRing for Stress Protection 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING 4 DIAGRAMS Applications Power Supply Output Rectification Power Management TO220 Instrumentation CASE 221A AYWW STYLE 6 Mechanical Characteristics: B60L45G 1 A K A Case: Epoxy, Molded 2 3 Epoxy Meets UL 94 V0 0.125 in Weight (Approximately): 1.9 Grams (TO220) Weight (Approximately): 4.3 Grams (TO247) Finish: All External Surfaces Corrosion Resistant and Terminal AYWWG B60L45 Leads are Readily Solderable A K A Lead Temperature for Soldering Purposes: 1 260C Max. for 10 Seconds 2 TO247 3 Shipped 50 Units Per Plastic Tube for TO220 CASE 340AL and 30 Units Per Plastic Tube for TO247 B60L45 = Device Code A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Device ORDERING INFORMATION Device Package Shipping MBR60L45CTG TO220 50 Units/Rail (PbFree) MBR60L45WTG TO247 30 Units/Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 4 MBR60L45CT/DMBR60L45CTG, MBR60L45WTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 30 A F(AV) (Rated V ) T = 145C for MBR60L45CTG R C (Rated V ) T = 165C for MBR60L45WTG R C Peak Repetitive Forward Current I 60 A FRM (Rated V , Square Wave, 20 kHz) R Nonrepetitive Peak Surge Current I 200 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR60L45CTG) JunctiontoCase R 1.9 JC (MBR60L45WTG) JunctiontoCase R 0.59 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 30 A, T = 25C) 0.55 F C (I = 30 A, T = 125C) 0.53 F C (I = 60 A, T = 25C) 0.73 F C (I = 60 A, T = 125C) 0.76 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 1.2 C (Rated DC Voltage, T = 125C) 275 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2