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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MBR735 - MBR760 Schottky Rectifiers
June 2013
MBR735 - MBR760
Schottky Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
Metal Silicon Junction, Majority Carrier Conduction
PIIN1
High Current Capacity, Low Forward-Voltage Drop
PIIN2 Case
Guard Ring for Over-Voltage Protection (OVP)
1
2
Applications
TO-220AC
Low-Voltage, High-Frequency Inverters
Free Wheeling and Polarity Protection
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Value
Symbol Parameter Units
735 745 750 760
V Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
I Average Rectified Forward Current 7.5 A
F(AV)
Non-Repetitive Peak Forward Surge Current
I 150 A
FSM
8.3 ms Single Half-Sine-Wave
T Storage Temperature Range -65 to +175 C
stg
T Operating Junction Temperature -65 to +150 C
J
Thermal Characteristics
Symbol Parameter Value Units
P Power Dissipation 2.0 W
D
R Thermal Resistance, Junction to Ambient 60 C/W
JA
R Thermal Resistance, Junction to Lead 3.0 C/W
JL
2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 1