MBR745G ON Semiconductor

MBR735, MBR745 Switch-mode Power Rectifiers Features and Benefits Low Forward Voltage MBR735, MBR745 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage MBR735 V 35 R MBR745 45 Average Rectified Forward Current I A F(AV) (T = 164C) Per Device 7.5 C Peak Repetitive Forward Current, (Square Wave, 20 kHz, T = 168C) I 7.5 A C FRM NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 3.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Min Max Characteristic Symbol Typ Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 7.5 Amps, T = 125C) 0.48 0.57 F J (i = 15 Amps, T = 125C) 0.61 0.72 F J (i = 15 Amps, T = 25C) 0.68 0.84 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 10 15 J (Rated dc Voltage, T = 25C) 0.03 0.1 J 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.