MBR30H60CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop Low leakage current High forward surge capability 3 High frequency operation 2 Solder bath temperature 275 C maximum, 10 s, per 1 JESD 22-B106 MBR30H60CT Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PIN 1 PIN 2 CASE TYPICAL APPLICATIONS PIN 3 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC PRIMARY CHARACTERISTICS converters, or polarity protection application. I 2 x 15 A F(AV) MECHANICAL DATA V 60 V RRM Case: TO-220AB I 150 A FSM Molding compound meets UL 94 V-0 flammability rating V 0.59 V F Base P/N-E3 - RoHS-compliant, commercial grade I 60 A R Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 T max. 175 C J E3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLMBR30H60CT UNIT Maximum repetitive peak reverse voltage V 60 V RRM Working peak reverse voltage V 60 V RWM Maximum DC blocking voltage V 60 V DC total device 30 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed I 150 A FSM on rated load per diode Peak repetitive reverse surge current per diode at t = 2 s, 1 kHz I 0.5 A p RRM Peak non-repetitive reverse energy (8/20 s waveform) E 20 mJ RSM Non-repetitive avalanche energy per diode at 25 C, I = 4 A, L = 10 mH E 80 mJ AS AS Electrostatic discharge capacitor voltage human body model: V 25 kV C C = 100 pF, R = 1.5 k Voltage rate of change (rated V) dV/dt 10 000V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 25-May-2018 Document Number: 88866 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR30H60CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL MBR30H60CT UNIT I = 15 A T = 25 C -0.68 F C I = 15 A T = 125 C 0.55 0.59 F C Maximum instantaneous forward voltage (1) V V F per diode I = 30 A T = 25 C - 0.83 F C I = 30 A T = 125 C 0.68 0.71 F C T = 25 C -60 A J Maximum reverse current per diode at (2) I R working peak reverse voltage T = 125 C 4.0 15 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR UNIT Typical thermal resistance junction to case R 1.5 C/W JC per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H60CT-E3/45 1.85 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 150 T = T Max. J J 8.3 ms Single Half Sine-Wave 125 30 100 20 75 50 10 25 0 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 25-May-2018 Document Number: 88866 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)