MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current 3 3 2 2 1 High forward surge capability 1 MBR30H100CT High frequency operation MBRF30H100CT PIN 1 PIN 2 PIN 1 PIN 2 Meets MSL level 1, per J-STD-020, LF maximum peak of CASE PIN 3 PIN 3 245 C (for TO-263AB package) 2 D PAK (TO-263AB) Solder bath temperature 275 C maximum, 10 s, per K JESD 22-B106 (for TO-220AB and ITO-220AB package) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 1 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power MBRB30H100CT PIN 1 K supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PIN 2 HEATSINK MECHANICAL DATA click logo to get started DESIGN SUPPORT TOOLS 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Models Available Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per PRIMARY CHARACTERISTICS J-STD-002 and JESD 22-B102 I 2 x 15 A F(AV) E3 suffix meets JESD 201 class 1A whisker test V 100 V RRM Polarity: As marked I 275 A FSM Mounting Torque: 10 in-lbs maximum V 0.67 V F I 5.0 A R T max. 175 C J 2 Package TO-220AC, ITO-220AC, D PAK (TO-263AB) Circuit configuration Dual common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR30H100CT UNIT Maximum repetitive peak reverse voltage V 100 RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 DC total device 30 Maximum average forward rectified current I F(AV) (fig.1) per diode 15 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I 275 FSM Peak repetitive reverse surge current per diode I 1.0 RRM at t = 2.0 s, 1 kHz p Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 11-Jun-2018 Document Number: 88791 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 15 A T = 25 C 0.82 F J I = 15 A T = 125 C 0.67 F J Maximum instantaneous forward voltage per diode V (1) V F I = 30 A T = 25 C 0.93 F J I = 30 A T = 125 C 0.80 F J T = 25 C 5.0 A J (2) Maximum reverse current per diode I Rated V R R T = 125 C 6.0 mA J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width, 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode R 1.9 4.6 1.9 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF30H100CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB30H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H100CT-E3/81 1.35 81 800/reel Tape and reel Revision: 11-Jun-2018 Document Number: 88791 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000