MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop 3 High forward surge capability 2 1 High frequency operation TO-3P (TO-247AD) Solder dip 275 C max., 10 s, per JESD 22-B106 PIN 2 Material categorization: for definitions of compliance PIN 1 PIN 3 please see www.vishay.com/doc 99912 CASE TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage, high frequency rectifier of switchin g I 30 A F(AV) mode power supplies, freewheeling diodes, DC/DC V 35 V, 45 V, 50 V, 60 V RRM converters, or polarity protection application. I 200 A FSM V 0.60 V, 0.65 V MECHANICAL DATA F T max. 150 C J Case: TO-3P (TO-247AD) Package TO-3P (TO-247AD) Molding compound meets UL 94 V-0 flammability rating Circuit configuration Common cathode Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Maximum working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 V DC Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load per diode Peak repetitive reverse surge current at t = 2 s, 1 kHz p (1) I 2.0 1.0 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T -65 to +150 C J Storage temperature range T -65 to +175 C STG Note (1) 2.0 s pulse width, f = 1.0 kHz Revision: 27-May-2020 Document Number: 88676 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT I = 20 A T = 25 C - 0.75 F C I = 20 A T = 125 C 0.60 0.65 F C Maximum instantaneous forward (1) V V F voltage per diode I = 30 A T = 25 C 0.76 - F C I = 30 A T = 125 C 0.72 - F C Maximum instantaneous reverse T = 25 C 1.0 5.0 J (1) current at rated DC blocking I mA R T = 125 C 60 100 voltage per diode J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Typical thermal resistance, junction to case per diode R 1.4 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 30 300 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 250 24 200 18 150 12 100 6 50 MBR3035PT, MBR3045PT MBR3050PT, MBR3060PT 0 0 0 100 1 100 50 150 10 Number of Cycles at 60 Hz Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 27-May-2020 Document Number: 88676 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)