MBR2535CTLG Switch-mode Power Rectifier Features and Benefits Low Forward Voltage www.onsemi.com Low Power Loss/High Efficiency High Surge Capacity SCHOTTKY BARRIER 150C Operating Junction Temperature 25 A Total (12.5 A Per Diode Leg) RECTIFIER This Device is PbFree and is RoHS Compliant* 25 AMPERES, 35 VOLTS Applications 1 Power Supply Output Rectification 2, 4 Power Management 3 Instrumentation Mechanical Characteristics 4 Case: Epoxy, Molded Epoxy Meets UL 94, V0 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260C Max. for 10 Seconds 1 ESD Rating: Human Body Model 3B 2 3 Machine Model C TO220 CASE 221A STYLE 6 MARKING DIAGRAM AYWW B2535LG AKA A = Assembly Location Y = Year WW = Work Week B2535L = Device Code G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please MBR2535CTLG TO220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MBR2535CTL/DMBR2535CTLG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 35 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 142C per Diode) 12.5 C (T = 142C per Device) 25 C Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, T = 139C) I 25 A C FRM NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature (Note 1) T 65 to +150 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy W 20 mJ aval Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, JunctiontoCase Min. Pad R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient Min. Pad R 75.0 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 2) v V F (i = 25 Amps, T = 25C) 0.51 0.55 F j (i = 12.5 Amps, Tj = 25C) 0.41 0.47 F (i = 12.5 Amps, Tj = 125C) 0.33 0.41 F Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, Tj = 25C) 0.8 5.0 (Rated dc Voltage, Tj = 125C) 300 500 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2