MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits www.onsemi.com Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max 10 A, T = 150C) C SCHOTTKY BARRIER High Junction Temperature RECTIFIER High dv/dt Capability 20 AMPERES, 30 VOLTS Excellent Ability to Withstand Reverse Avalanche Energy Transients Low Power Loss/High Efficiency 1 High Surge Capacity 2, 4 175C Operating Junction Temperature 3 20 A Total (10 A Per Diode Leg) This Device is PbFree and is RoHS Compliant* MARKING Applications DIAGRAM Power Supply Output Rectification 4 Power Management ORING Instrumentation TO220 Mechanical Characteristics AYWW CASE 221A B2030LG STYLE 6 Case: Epoxy, Molded AKA Epoxy Meets UL 94 V0 0.125 in 1 Weight: 1.9 Grams (Approximately) 2 3 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Sec A = Assembly Location Y = Year ESD Rating: Human Body Model 3B WW = Work Week Machine Model C B2030L = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR2030CTLG TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 5 MBR2030CTL/DMBR2030CTLG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 167 C) C Per Diode 10 Per Device 20 Non-repetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Forward Current I 10 A FRM (Square Wave, 20 kHz, T = 166C) C Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase (Min. Pad) R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient (Min. Pad) R 60 C/W JA ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 25C) 0.45 0.52 F J (i = 10 Amps, T = 150C) 0.32 0.40 F J (i = 20 Amps, T = 25C) 0.51 0.58 F J (i = 20 Amps, T = 150C) 0.41 0.48 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 25C) 0.11 5.0 J (Rated dc Voltage, T = 100C) 10 40 J (Rated dc Voltage, T = 125C) 75 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. www.onsemi.com 2