MBR2045MFS, NRVB2045MFS Switch -mode Power Rectifiers These stateoftheart devices have the following features: www.onsemi.com Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After SCHOTTKY BARRIER Board Mounting RECTIFIERS Guardring for Stress Protection 20 AMPERES Low Forward Voltage Drop 45 VOLTS 150C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring 1,2,3 5,6 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* MARKING These Devices are PbFree, Halogen Free/BFR Free and are RoHS DIAGRAM Compliant A C 1 Mechanical Characteristics: A B2045 SO8 FLAT LEAD Case: Epoxy, Molded AYWZZ A CASE 488AA Epoxy Meets Flammability Rating UL 940 0.125 in. STYLE 2 C Not Used Lead Finish: 100% Matte Sn (Tin) B2045 = Specific Device Code Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260C Max. for 10 Seconds Y = Year Device Meets MSL 1 Requirements W = Work Week ZZ = Lot Traceability Applications Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads ORDERING INFORMATION Device Package Shipping MBR2045MFST1G SO8 FL 1500 / (PbFree) Tape & Reel NRVB2045MFST1G* SO8 FL 1500 / (PbFree) Tape & Reel MBR2045MFST3G SO8 FL 5000 / (PbFree) Tape & Reel NRVB2045MFST3G* SO8 FL 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2019 Rev. 2 MBR2045MFS/DMBR2045MFS, NRVB2045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 45 R Average Rectified Forward Current I 20 A F(AV) (Rated V , T = 130C) R C Peak Repetitive Forward Current, I 40 A FRM (Rated V , Square Wave, 20 kHz, T = 135C) R C NonRepetitive Peak Surge Current I 400 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 150 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.6 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) Thermal Resistance, JunctiontoAmbient, Steady State R 45 C/W JA 2 (Assumes 600 mm , 2oz, 2 layer on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 15 A, T = 125C) 0.35 0.41 F J (i = 15 A, T = 25C) 0.44 0.49 F J (i = 30 A, T = 125C) 0.46 0.58 F J (i = 30 A, T = 25C) 0.51 0.61 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 200 300 J (Rated dc Voltage, T = 25C) 0.3 0.6 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2