MBR2080CTG, MBR2090CTG, MBR20100CTG Switch-mode Power Rectifiers www.onsemi.com This series uses the Schottky Barrier principle with a platinum barrier metal. These stateoftheart devices have the following SCHOTTKY BARRIER features: RECTIFIERS Features 20 AMPERES 20 A Total (10 A Per Diode Leg) 80100 VOLTS GuardRing for Stress Protection Low Forward Voltage 1 175C Operating Junction Temperature 2, 4 Epoxy Meets UL 94 V0 0.125 in 3 Low Power Loss/High Efficiency High Surge Capacity 4 Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube These Devices are PbFree and are RoHS Compliant* Mechanical Characteristics: Case: Epoxy, Molded 1 Weight: 1.9 grams (approximately) 2 3 Finish: All External Surfaces Corrosion Resistant and Terminal TO220 Leads are Readily Solderable CASE 221A Lead Temperature for Soldering Purposes: STYLE 6 260C Max. for 10 Seconds MARKING DIAGRAM AY WW B20x0G AKA A = Assembly Location Y = Year WW = Work Week B20x0 = Device Code x = 8, 9 or 10 G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package *For additional information on our PbFree strategy and soldering details, please dimensions section on page 2 of this data sheet. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 1 MBR20100CT/DMBR2080CTG, MBR2090CTG, MBR20100CTG MAXIMUM RATINGS (Per Diode Leg) MBR 2080CT 2090CT 20100CT Rating Symbol Unit Peak Repetitive Reverse Voltage V 80 90 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 10 A F(AV) (Rated V ) T = 133C R C Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz) T = 133C R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance JunctiontoCase R 2.0 C/W JC JunctiontoAmbient R 60 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.75 F C (i = 10 Amps, T = 25C) 0.85 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 6.0 C (Rated dc Voltage, T = 25C) 0.1 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping MBR2080CTG TO220 50 Units / Rail (PbFree) MBR2090CTG TO220 50 Units / Rail (PbFree) MBR20100CTG TO220 50 Units / Rail (PbFree) www.onsemi.com 2