MBR1535CTG, MBR1545CTG Switch-mode Power Rectifier Features and Benefits www.onsemi.com CenterTap Configuration Low Forward Voltage SCHOTTKY BARRIER Low Power Loss / High Efficiency RECTIFIERS High Surge Capacity 15 AMPERES 175C Operating Junction Temperature 35 and 45 VOLTS 15 A Total (7.5 A Per Diode Leg) These Devices are PbFree and are RoHS Compliant* 1 Applications 2, 4 Power Supply Output Rectification 3 Power Management Instrumentation MARKING Mechanical Characteristics DIAGRAM Case: Epoxy, Molded 4 Epoxy Meets UL 94, V0 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable TO220 AYWW CASE 221A Lead Temperature for Soldering Purposes: MBR15x5CTG STYLE 6 AKA 260C Max. for 10 Seconds 1 ESD Rating: Human Body Model = 3B 2 3 Machine Model = C A = Assembly Location Y = Year WW = Work Week x = 3 or 4 G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 9 MBR1535CT/DMBR1535CTG, MBR1545CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage MBR1535CT V 35 R MBR1545CT 45 Average Rectified Forward Current I A F(AV) (T = 163C) Per Diode 7.5 C Per Device 15 Peak Repetitive Forward Current I 15 A FRM (Square Wave, 20 kHz, T = 161C) Per Diode C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS PER DIODE Characteristic Symcbol Value Unit Maximum Thermal Resistance, JunctiontoCase (Min. Pad) R 3.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient (Min. Pad) R 60 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 7.5 Amps, T = 125C) 0.47 0.57 F J (i = 15 Amps, T = 125C) 0.63 0.72 F J (i = 15 Amps, T = 25C) 0.66 0.84 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 125C) 10 15 J (Rated DC Voltage, T = 25C) 0.025 0.1 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping MBR1535CTG TO220 50 Units / Rail (PbFree) MBR1545CTG TO220 50 Units / Rail (PbFree) www.onsemi.com 2