MBR120VLSFT1G ON Semiconductor

MBR120VLSF, NRVB120VLSF Schottky Power Rectifier, Surface Mount 1.0 A, 20 V, SOD-123 Package MBR120VLSF, NRVB120VLSF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 1.0 A F(AV) (Rated V ) T = 119C R L NonRepetitive Peak Surge Current I 45 A FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +125 C stg Operating Junction Temperature T 65 to +125 C J Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 26 C/W tjl Thermal Resistance JunctiontoLead (Note 2) R 21 tjl Thermal Resistance JunctiontoAmbient (Note 1) R 325 tja Thermal Resistance JunctiontoAmbient (Note 2) R 82 tja 1. Mounted with minimum recommended pad size, PC Board FR4. 2 2. Mounted with 1 in. copper pad (Cu area 700 mm ). ELECTRICAL CHARACTERISTICS Characteristic Symbol T = 25 C T = 85 C Unit J J Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 0.1 A) 0.275 0.205 F (I = 0.5 A) 0.315 0.270 F (I = 1.0 A) 0.340 0.300 F Maximum Instantaneous Reverse Current (Note 3) I mA R (Rated DC Voltage) 0.60 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.