MBR10100G ON Semiconductor

MBR1080G, MBR1090G, MBR10100G, NRVB10100G SWITCHMODE MBR1080G, MBR1090G, MBR10100G, NRVB10100G MAXIMUM RATINGS MBR/NRVB Rating Symbol Unit 1080 1090 10100 Peak Repetitive Reverse Voltage V 80 90 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Rated V ) T = 133C I 10 A R C F(AV) Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 133C 20 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.7 F C (i = 10 Amps, T = 25C) 0.8 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 6.0 C (Rated dc Voltage, T = 25C) 0.10 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.