X-On Electronics has gained recognition as a prominent supplier of MBR1045MFST3G Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR1045MFST3G Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

MBR1045MFST3G ON Semiconductor

MBR1045MFST3G electronic component of ON Semiconductor
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Part No.MBR1045MFST3G
Manufacturer: ON Semiconductor
Category: Rectifiers
Description: Rectifiers 10 A 45 V SCHOTTKY DIODE IN SO-8FL
Datasheet: MBR1045MFST3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 5000
Multiples : 5000
5000 : USD 0.5076
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We are delighted to provide the MBR1045MFST3G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR1045MFST3G and other electronic components in the Rectifiers category and beyond.

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MBR1045MFS, NRVB1045MFS Switch - mode Power Rectifiers These stateoftheart devices have the following features: MBR1045MFS, NRVB1045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 45 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 142C) R C Peak Repetitive Forward Current, I 20 A FRM (Rated V , Square Wave, 20 kHz, T = 140C) R C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 150 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.7 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 10 A, T = 125C) 0.430 0.52 F J (i = 10 A, T = 25C) 0.504 0.62 F J (i = 20 A, T = 125C) 0.550 0.65 F J (i = 20 A, T = 25C) 0.595 0.75 F J Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 47 170 J (Rated dc Voltage, T = 25C) 0.076 0.500 J Diode Capacitance C 300 pF D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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