Switchmode Power Rectifier 60 V, 10 A MBR10L60CTG, MBRF10L60CTG www.onsemi.com Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency SCHOTTKY BARRIER High Surge Capability RECTIFIER 10 A Total (5 A Per Diode Leg) 10 AMPERES, 60 VOLTS GuardRing for Stress Protection These Devices are PbFree and are RoHS Compliant 1 2, 4 Applications 3 Power Supply Output Rectification Power Management 4 MARKING Instrumentation DIAGRAMS Mechanical Characteristics: Case: Epoxy, Molded TO220 Epoxy Meets UL 94 V0 0.125 in CASE 221A AYWW Weight (Approximately): 1.9 Grams STYLE 6 B10L60G Finish: All External Surfaces Corrosion Resistant and Terminal AKA 1 Leads are Readily Solderable 2 3 Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds AYWW TO220 FULLPAK B10L60G CASE 221D AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B10L60 = Device Code G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 3 MBR10L60CT/DMBR10L60CTG, MBRF10L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Per Leg) I 5 A F(AV) (Rated V ) T = 140C (Per Device) 10 R C Non-repetitive Peak Surge Current I 200 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 65 to +175 C stg ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W MBR10L60CTG JunctiontoCase R 2.8 JC JunctiontoAmbient R 70 JA MBRF10L60CTG JunctiontoCase R 5.7 JC JunctiontoAmbient 75 R JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 5 A, T = 25C) 0.49 0.57 F C (I = 5 A, T = 125C) 0.43 0.49 F C (I = 10 A, T = 25C) 0.60 0.66 F C (I = 10 A, T = 125C) 0.53 0.61 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 77 220 A C (Rated DC Voltage, T = 125C) 33 60 mA C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE ORDERING INFORMATION Device Order Number Package Type Shipping MBR10L60CTG TO220 50 Units / Rail (PbFree) MBRF10L60CTG TO220 FULLPAK 50 Units / Rail (PbFree) www.onsemi.com 2