X-On Electronics has gained recognition as a prominent supplier of MBR120LSFT1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR120LSFT1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR120LSFT1G ON Semiconductor

MBR120LSFT1G electronic component of ON Semiconductor
MBR120LSFT1G ON Semiconductor
MBR120LSFT1G Schottky Diodes & Rectifiers
MBR120LSFT1G  Semiconductors

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See Product Specifications
Part No. MBR120LSFT1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers 1A 20V
Datasheet: MBR120LSFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1141 ea
Line Total: USD 342.3 
Availability - 2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1052
6000 : USD 0.1028
9000 : USD 0.102
12000 : USD 0.1
27000 : USD 0.0988
51000 : USD 0.0983
102000 : USD 0.0977
150000 : USD 0.0972

1784
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3624
50 : USD 0.2821
150 : USD 0.1911
500 : USD 0.1579
3000 : USD 0.1431
6000 : USD 0.1342

7331
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 201
Multiples : 1
201 : USD 0.3235
270 : USD 0.2405
280 : USD 0.232
500 : USD 0.1808
1000 : USD 0.1523
3000 : USD 0.1308
6000 : USD 0.1152

14550
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1369
6000 : USD 0.1338
9000 : USD 0.1326
12000 : USD 0.13
27000 : USD 0.1284

2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1141
9000 : USD 0.1021

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBR120LSFT1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR120LSFT1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR120LSF, NRVB120LSF Surface Mount Schottky Power Rectifier Plastic SOD123 Package This device uses the Schottky Barrier principle with a large area MBR120LSF, NRVB120LSF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 115C) 1.0 R L Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 110C) 2.0 R L NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change (Rated V , T = 25C) dv/dt 10,000 V/ s R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 26 C/W tjl Thermal Resistance JunctiontoLead (Note 2) R 21 tjl Thermal Resistance JunctiontoAmbient (Note 1) R 325 tja Thermal Resistance JunctiontoAmbient (Note 2) R 82 tja 1. Mounted with minimum recommended pad size, PC Board FR4. 2 2. Mounted with 1 in. copper pad (Cu area 700 mm ). ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 V T = 25C T = 85C V F J J (I = 0.1 A) 0.34 0.26 F (I = 1.0 A) 0.45 0.415 F (I = 3.0 A) 0.65 0.67 F Maximum Instantaneous Reverse Current (Note 3), See Figure 4 I T = 25C T = 85C mA R J J (V = 20 V) 0.40 25 R (V = 10 V) 0.10 18 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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