X-On Electronics has gained recognition as a prominent supplier of MBR1100RLG Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR1100RLG Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR1100RLG ON Semiconductor

MBR1100RLG electronic component of ON Semiconductor
MBR1100RLG ON Semiconductor
MBR1100RLG Schottky Diodes & Rectifiers
MBR1100RLG  Semiconductors

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See Product Specifications
Part No. MBR1100RLG
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1A 100V
Datasheet: MBR1100RLG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.1561 ea
Line Total: USD 780.5 
Availability - 4850
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
4850
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 0.1561
10000 : USD 0.1554
25000 : USD 0.1546
50000 : USD 0.1537
100000 : USD 0.153

4669
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 172
Multiples : 1
172 : USD 0.3783
273 : USD 0.2383
275 : USD 0.2359
278 : USD 0.2336
281 : USD 0.2313
500 : USD 0.2292
1000 : USD 0.195
3000 : USD 0.1732

2216
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 5
Multiples : 5
5 : USD 0.2877
50 : USD 0.2541
150 : USD 0.192
500 : USD 0.1859

4850
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 0.203
10000 : USD 0.202
25000 : USD 0.201
50000 : USD 0.1999
100000 : USD 0.1989

4669
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 275
Multiples : 1
275 : USD 0.2359
278 : USD 0.2336
281 : USD 0.2313
500 : USD 0.2292
1000 : USD 0.195
3000 : USD 0.1732

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Series
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Operating Temperature Range
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Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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We are delighted to provide the MBR1100RLG from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR1100RLG and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, www.onsemi.com highfrequency inverters, free wheeling diodes, and polarity protection diodes. SCHOTTKY Features BARRIER RECTIFIER Low Reverse Current Low Stored Charge, Majority Carrier Conduction 1.0 AMPERE, 100 VOLTS Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction GuardRing for Stress Protection Low Forward Voltage 175C Operating Junction Temperature High Surge Capacity These Devices are PbFree and are RoHS Compliant DO41 Mechanical Characteristics: AXIAL LEAD Case: Epoxy, Molded CASE 59 STYLE 1 Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAM Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band A MBR1100 MAXIMUM RATINGS YYWW Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM A = Assembly Location Working Peak Reverse Voltage V RWM DC Blocking Voltage V Y = Year R WW = Work Week Average Rectified Forward Current I 1.0 A O = PbFree Package (V 0.2 V (dc), R = 50C/W, R(equiv) R JA (Note: Microdot may be in either location) P.C. Board Mounting, see Note 3 , T = 120C) A Peak Repetitive Forward Current I 2.0 A FRM (V 0.2 V (dc), R = 50C/W, R(equiv) R JA ORDERING INFORMATION P.C. Board Mounting, see Note 3 , T = 110C) A NonRepetitive Peak Surge Current I 50 A Device Package Shipping FSM (Surge Applied at Rated Load Conditions MBR1100G Axial Lead 1000 Units/Bag Halfwave, Single Phase, 60 Hz) (PbFree) Operating and Storage Junction Temperature T , T 65 to C J stg Range (Note 1) +175 MBR1100RLG Axial Lead 5000/Tape & Reel (PbFree) Voltage Rate of Change (Rated V ) dv/dt 10 V/ns R For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 7 MBR1100/DMBR1100 THERMAL CHARACTERISTICS (See Note 4) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R See Note 3 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (i = 1 A, T = 25C) 0.79 F L (i = 1 A, T = 100C) 0.69 F L Maximum Instantaneous Reverse Current Rated dc Voltage (Note 2) i mA R (T = 25C) 0.5 L (T = 100C) 5.0 L 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 20 1 K 400 10 T = 150C 200 T = 150C J J 5.0 100 100C 125C 40 2.0 20 25C 10 100C 1.0 4.0 0.5 2.0 1.0 0.2 0.4 0.2 0.1 0.1 0.05 0.04 0.02 0.02 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 90 100 v , INSTANTANEOUS VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V is sufficiently below rated V . R R 4.0 4.0 3.0 3.0 SQUARE WAVE dc dc 2.0 2.0 SQUARE WAVE 1.0 1.0 0 0 0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 T , AMBIENT TEMPERATURE (C) I , AVERAGE FORWARD CURRENT (AMPS) A F(AV) Figure 3. Current Derating Figure 4. Power Dissipation (Mounting Method 3 per Note 3) www.onsemi.com 2 I , AVERAGE FORWARD CURRENT (AMPS) i , INSTANTANEOUS FORWARD CURRENT (AMPS) F(AV) F I , REVERSE CURRENT ( A) R P , AVERAGE POWER DISSIPATION (WATTS) F(AV)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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