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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MBR1035 - MBR1060 Schottky Rectifiers
October 2013
MBR1035 - MBR1060
Schottky Rectifiers
Description
Features
Low Power Loss, High Efficiency This Schottky rectifier is optimal for secondary rectifica-
tion and free-wheeling applications for high-efficiency
High Surge Capacity
DC-DC convertor design, which features very low for-
Metal Silicon Junction, Majority Carrier Conduction
ward voltage drop and low leakage current.
High Current Capacity, Low Forward-Voltage Drop
Guard Ring for Over-Voltage Protection (OVP)
Applications
PIIN1
Low-Voltage
High-Frequency Inverters
PIIN2 Case
Free Wheeling
1
Polarity Protection
2
TO-220AC
Ordering Information
Part Number Marking Package Packing Method
MBR1035 MBR1035
MBR1045 MBR1045
TO-220 2L Rail
MBR1050 MBR1050
MBR1060 MBR1060
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Value
Symbol Parameter Units
MBR1035 MBR1045 MBR1050 MBR1060
V Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
I Average Rectified Forward Current 10 A
F(AV)
Non-Repetitive Peak Forward Surge Current
I 150 A
FSM
8.3 ms Single Half-Sine Wave
T Storage Temperature Range -65 to +175 C
stg
T Operating Junction Temperature -65 to +150 C
J
2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1035 - MBR1060 Rev. 1.2.1 1