MBR1045MFS, NRVB1045MFS Switch - mode Power Rectifiers These stateoftheart devices have the following features: MBR1045MFS, NRVB1045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 45 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 142C) R C Peak Repetitive Forward Current, I 20 A FRM (Rated V , Square Wave, 20 kHz, T = 140C) R C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 150 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.7 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 10 A, T = 125C) 0.430 0.52 F J (i = 10 A, T = 25C) 0.504 0.62 F J (i = 20 A, T = 125C) 0.550 0.65 F J (i = 20 A, T = 25C) 0.595 0.75 F J Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 47 170 J (Rated dc Voltage, T = 25C) 0.076 0.500 J Diode Capacitance C 300 pF D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.