MBR160G ON Semiconductor

MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes. MBR150, MBR160 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 1) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 0.1 A) 0.550 F (i = 1.0 A) 0.750 F (i = 3.0 A) 1.000 F Maximum Instantaneous Reverse Current Rated dc Voltage (Note 2) i mA R (T = 25C) 0.5 L (T = 100C) 5.0 L 10 10 T = 150C J 5.0 125C T = 150C 100C 7.0 J 2.0 25C 1.0 5.0 100C 0.5 0.2 75C 3.0 0.1 0.05 2.0 0.02 0.01 0.005 25C 1.0 0.002 0.001 0.7 0 10 20 30 40 50 60 70 V , REVERSE VOLTAGE (VOLTS) 0.5 R Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the volt- 0.3 age grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V is sufficiently below rated V . R R 0.2 5.0 0.1 SQUARE 4.0 WAVE 0.07 3.0 0.05 dc 2.0 0.03 5 10 I /I = 20 0.02 PK AV 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 5.0 I , AVERAGE FORWARD CURRENT (AMPS) v , INSTANTANEOUS VOLTAGE (VOLTS) F(AV) F Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation