MBR20H100CT, MBRF20H100CT, MBRB20H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB ITO-220AB Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current 3 3 2 High forward surge capability 2 1 MBR20H100CT 1 MBRF20H100CT High frequency operation PIN 1 PIN 2 PIN 1 PIN 2 Meets MSL level 1, per J-STD-020, LF maximum peak of CASE PIN 3 PIN 3 245 C (for TO-263AB package) 2 D PAK (TO-263AB) Solder bath temperature 275 C maximum, 10 s, per K JESD 22-B106 (for TO-220AB and ITO-220AB package) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 TYPICAL APPLICATIONS 1 For use in high frequency rectifier of switching mode power MBRB20H100CT PIN 1 K supplies, freewheeling diodes, DC/DC converters and polarity protection application. PIN 2 HEATSINK MECHANICAL DATA click logo to get started DESIGN SUPPORT TOOLS 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Models Base P/N-E3 - RoHS-compliant, commercial grade Available Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 PRIMARY CHARACTERISTICS E3 suffix meets JESD 201 class 1A whisker test I 2 x 10 A F(AV) Polarity: as marked V 100 V RRM Mounting Torque: 10 in-lbs maximum I 250 A FSM I 4.5 A R V 0.64 V F T max. 175 C J 2 Package TO-220AB, ITO-220AB, D PAK (TO-263AB) Circuit configurations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR20H100CT UNIT Maximum repetitive peak reverse voltage V 100 RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 DC total device 20 Maximum average forward rectified current I F(AV) per diode 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 250 FSM Peak repetitive reverse current per diode at t = 2.0 s, 1 kHz I 1.0 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T . T -65 to +175 C J STG Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 11-Jun-2018 Document Number: 88673 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR20H100CT, MBRF20H100CT, MBRB20H100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 10 A T = 25 C 0.77 F C I = 10 A T = 125 C 0.64 F C (1) Maximum instantaneous forward voltage per diode V V F I = 20 A T = 25 C 0.88 F C I = 20 A T = 125 C 0.73 F C T = 25 C 4.5 A J Maximum reverse current at working peak reverse (2) I Rated V R R voltage per diode T = 125 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode R 2.0 5.8 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF20H100CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB20H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB20H100CT-E3/81 1.35 81 800/reel Tape and reel Revision: 11-Jun-2018 Document Number: 88673 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000