33 3 MBRB3045CT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES 2 D PAK (TO-263AB) Power pack Guardring for overvoltage protection K Low power loss, high efficiency Low forward voltage drop 2 High forward surge capability 1 High frequency operation MBRB3045CT Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PIN 1 K AEC-Q101 qualified PIN 2 HEATSINK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switchin g 3D Models mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS 2 Case: D PAK (TO-263AB) I 2 x 15 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V Base P/N-E3 - RoHS-compliant, commercial grade RRM Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified I 200 A FSM ( X denotes revision code, e.g. A, B, ...) V 0.60 V F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 2 Package D PAK (TO-263AB) E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Circuit configurations Common cathode Polarity: as marked MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB3045CT UNIT Maximum repetitive peak reverse voltage V 45 RRM Working peak reverse voltage V 45 V RWM Maximum DC blocking voltage V 45 DC 30 total device Maximum average forward rectified current I F(AV) per diode 15 A Peak forward surge current 8.3 ms single half sine-wave superimposed on I 200 FSM rated load per diode Peak repetitive reverse current per diode at t = 2.0 s, 1 kHz I 2.0 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T -65 to +150 J C Storage temperature range T -65 to +175 STG Revision: 21-Mar-2019 Document Number: 88677 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D MBRB3045CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 20 A T = 125C 0.60 F C (1) Maximum instantaneous forward voltage per diode V I = 30 A T = 25C 0.76 V F F C I = 30 A T = 125C 0.72 F C T = 25 C 1.0 J Maximum instantaneous reverse current at DC blocking voltage (1) I Rated V mA R R per diode T = 125 C 60 J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBRB UNIT Typical thermal resistance per diode R 1.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB MBRB3045CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB3045CT-E3/81 1.35 81 800/reel Tape and reel (1) TO-263AB MBRB3045CTHE3 B/P 1.35 P 50/tube Tube (1) TO-263AB MBRB3045CTHE3 B/I 1.35 I 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 21-Mar-2019 Document Number: 88677 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000