333 3 MCL4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Electrical data identical with the device 1N4151 MicroMELF package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes / options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel(8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS MCL4151 V = 75 V MCL4151-TR3 or MCL4151-TR Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 75 V RRM Reverse voltage V 50 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 450 mA FRM Forward continuous current I 200 mA F Average forward current V = 0 I 150 mA R F(AV) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Mounted on epoxy-glass hard tissue, fig. 4, Thermal resistance junction to ambient air R 500 K/W thJA 2 35 m copper clad, 0.9 mm copper area per electrode Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.1, 25-Feb-2020 Document Number: 85567 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MCL4151 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 0.880 1 V F F V = 50 V I 50 nA R R Reverse current V = 50 V, T = 150 C I 50 A R j R I = 5 A, t /T = 0.01, R p Breakdown voltage V 75 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 2pF D V = 50 mV HF I = I = 10 mA, F R 4 i = 1 mA R Reverse recovery time t ns rr I = 10 mA, V = 6 V, F R 2 i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 3.0 Scattering Limit 2.5 f=1MHz 10 T = 25 C j 2.0 1 1.5 1.0 0.1 0.5 V =50V R 0.01 0 200 100 0 40 80 120 160 0.1 1 10 94 9151 T - Junction Temperature (C) 94 9153 V - Reverse Voltage (V) j R Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 1000 0.71 1.3 1.27 T = 100 C j 100 0.152 0.355 10 T = 25 C j 1 0.1 2.5 2.0 0 0.4 0.8 1.2 1.6 24 95 10329 94 9152 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Board for R Definition (in mm) thJA Rev. 2.1, 25-Feb-2020 Document Number: 85567 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F C - Diode Capacitance (pF) D 25 10 9.9