STEALTH Diode 50 A, 600 V FFH50US60S Description The FFH50US60S is a STEALTH diode optimized for low loss performance in output rectification. The STEALTH family exhibits www.onsemi.com low reverse recovery current (I ), low V and soft recovery under RR F typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower V and I reduces diode losses. F RR CATHODE Features (BOTTOM Stealth Recovery, t = 113 ns ( I = 50 A) rr F SIDE METAL) Max Forward Voltage, V = 1.54 V ( T = 25C) ANODE F C CATHODE 600 V Reverse Voltage and High Reliability TO247 Operating Temperature = 175C JEDEC STYLE Avalanche Energy Rated 2 LEAD CASE 340 CL This Device is PbFree and is RoHS Compliant Applications MARKING DIAGRAM SMPS, Welders Power Factor Correction Uninterruptible Power Supplies Y&Z&3&K 50US60S Motor Drives ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Repetitive Peak Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Y = ON Semiconductor Logo Average Rectified Forward Current I 50 A F(AV) &Z = Assembly Plant Code (T = 120C) C &3 = Numeric Date Code Repetitive Peak Surge Current I 100 A &K = Lot Code FRM (20 kHz Square Wave ) 50US60S = Specific Device Code Nonrepetitive Peak Surge Current I 500 A FSM K (Halfwave, 1 Phase, 60 Hz) Power Dissipation P 200 W D Avalanche Energy E 20 mJ AVL (1 A, 40 mH) Operating and Storage Temperature T T 55 to 175 C J, STG Range Maximum Temperature for Soldering Leads T 300 C L at 0.063 in (1.6 mm) from Case for 10 s A Maximum Temperature for Soldering T 260 C PKG Package Body for 10 s ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 2 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: March, 2020 Rev. 3 FFH50US60S/DFFH50US60S PACKAGE MARKING AND ORDERING INFORMATION Packing Methode Device Marking Device Package Reel Size Tape Width Quantity FFH50US60S FFH50US60S TO2472L Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 125C 1 mA C ON CHARACTERISTICS V Instantaneous Forward Voltage I = 50 A T = 25C 1.38 1.54 V F F C T = 125C C 1.37 1.53 V DYNAMIC CHARACTERISTICS V = 10 V, I = 0 A C Junction Capacitance 110 pF R F J SWITCHING CHARACTERISTICS I = 1 A, dI /dt = 100 A/ s, V = 15 V T Reverse Recovery Time 47 80 ns F F R rr I = 50 A, dI /dt = 100 A/ s, V = 15 V F F R 75 124 ns T Reverse Recovery Time I = 50 A, dI /dt = 200 A/ s, V = 390 V, 113 ns rr F F R T = 25C C I Reverse Recovery Current 9.6 A RR Q Reverse Recovered Charge 0.9 C RR T Reverse Recovery Time I = 50 A, dIF/dt = 200 A/ s, V = 390 V, 235 ns rr F R T = 125C C S Softness Factor (t /t ) 1.5 b a I Reverse Recovery Current 15 A RR Q Reverse Recovered Charge 2.3 C RR T Reverse Recovery Time I = 50 A, dI /dt = 1000 A/ s, 110 ns rr F F V = 390 V, T = 125C R C S Softness Factor (t /t ) 0.8 b a I Reverse Recovery Current 46 A RR Q Reverse Recovered Charge 3.1 C RR dI /dt Maximum di/dt during t 1000 A/ s M b THERMAL CHARACTERISTICS R Thermal Resistance Junction to Case 0.75 C/W JC TO247 R Thermal Resistance Junction to Ambient 30 C/W JA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2