FFPF30UP20S 30 A, 200 V, Ultrafast Diode The FFPF30UP20S is a ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power www.onsemi.com supplies and industrial application. Features Ultrafast Recovery t = 50 ns ( I = 30 A) rr F Max Forward Voltage, V = 1.15 V ( T = 25C) F C Reverse Voltage, V = 200 V RRM 1 2 Avalanche Energy Rated 1. Cathode 2. Anode This Device is PbFree and is RoHS Compliant Applications Output Rectifiers SMPS, Power Switching Circuits FreeWheeling Diode for Motor Application ABSOLUTE MAXIMUM RATINGS 12 T = 25C unless otherwise noted C Symbol Parameter Rating Unit TO220, 2Lead CASE 221AS V Peak Repetitive Reverse Voltage 200 V RRM V Working Peak Reverse Voltage 200 V RWM V DC Blocking Voltage 200 V R MARKING DIAGRAM Average Rectified Forward Current I 30 A F(AV) T = 102C C I Nonrepetitive Peak Surge Current 300 A FSM 60 Hz Single HalfSine Wave C T T Operating Junction and Storage 65 to J, STG Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y&Z&3&K F30UP20S Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot F30UP20S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2019 Rev. 4 FFPF30UP20S/DFFPF30UP20S THERMAL CHARACTERISTICS Symbol Parameter Max. Unit C/W R Maximum Thermal Resistance, Junction to Case 3.0 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF30UP20STU F30UP20S TO220F2L Tube N/A N/A 50 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min. Typ. Max. Unit V I = 30 A T = 25C 1.15 V F F C (Note 1) I = 30 A T = 125C 1.0 V F C I V = 200 V T = 25C 100 A R R C (Note 1) V = 200 V T = 125C 500 A R C t I = 1 A, di /dt = 100 A/ s, V = 30 V T = 25C 40 ns rr F F CC C I = 30 A, di /dt = 200 A/ s, V = 130 V T = 25C 50 ns F F CC C t I = 30 A, di /dt = 200 A/ s, V = 130 V T = 25C 22 ns a F F CC C t T = 25C 14 ns b C Q T = 25C 67 nC rr C W Avalanche Energy (L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2