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FFPF60SA60DS STEALTH Dual Series Diode
February 2017
FFPF60SA60DS
TM
8 A, 600 V, STEALTH Dual Series Diode
Features Description
Stealth Recovery t = 39 ns (@ I = 8 A)
rr F
The FFPF60SA60DS is STEALTH dual series diode with soft
Max Forward Voltage, V = 2.4 V (@ T = 25C)
F C
recovery characteristics. It is silicon nitride passivated ionim-
600 V Reverse Voltage and High Reliability planted epitaxial planar construction. This device is intended for
use as freewheeling of boost diode in switching power supplies
Avalanche Energy Rated
and other power swithching applications. Their low stored charge
and hyperfast soft recovery minimize ringing and electrical noise
RoHS Compliant
in many power switching circuits reducing power loss in the
switching transistors.
Applications
SMPS FWD, Motor Drive FWD, Snubber Diode
Hard Switched PFC Boost Diode
UPS FWD
TO-220F
1 2 3
o
Absolute Maximum Ratings T = 25 C unless otherwise noted
C
Symbol Parameter Rating Unit
V Peak Repetitive Reverse Voltage 600 V
RRM
V Working Peak Reverse Voltage 600 V
RWM
V DC Blocking Voltage 600 V
R
o
I Average Rectified Forward Current @ T = 95 C 8 A
F(AV) C
Non-repetitive Peak Surge Current
I 80 A
FSM
60Hz Single Half-Sine Wave
P Power Dissipation 26 W
D
W Avalanche Energy (1 A, 40 mH) 20 mJ
AVL
o
T , T Operating Junction and Storage Temperature -65 to +175 C
J STG
Thermal Characteristics
Symbol Parameter Max. Unit
o
R Maximum Thermal Resistance, Junction to Case 3.125 C/W
JC
o
R Maximum Thermal Resistance, Junction to Ambient 62.5 C/W
JA
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFPF60SA60DSTU FFPF60SA60DS TO-220F Tube N/A N/A
30
2017 Semiconductor Components Industries, LLC
1 www.fairchildsemi.com
FFPF60SA60DS Rev. 1.1
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