Silicon Carbide Schottky Diode 650 V, 6 A FFSB0665B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, V I RRM F faster operating frequency, increased power density, reduced EMI, and 650 V 6.0 A reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 24.5 mJ High Surge Current Capacity 1., 3. Cathode 2. Anode Positive Temperature Coefficient Schottky Diode Ease of Paralleling No Reverse Recovery / No Forward Recovery AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant 2 Applications 2 D PAK2 Automotive HEVEV Onboard Chargers TO263 CASE 418BK Automotive HEVEV DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Parameter Symbol Value Unit Peak Repetitive Reverse Voltage V 650 V RRM Single Pulse Avalanche Energy (T = 25C, E 24.5 mJ J AS &Z&3&K I = 9.9 A, L = 0.5 mH, V = 50 V) L(pk) FFSB Continuous Rectified Forward T < 150 I 6.0 A 0665B C F Current T < 135 8.0 C NonRepetitive Peak Forward T = 25C I 523 A FM C Surge Current t = 10 s P &Z = Assembly Plant Code T = 150C 467 C t = 10 s &3 = Numeric Date Code P &K = Lot Code NonRepetitive Forward Surge T = 25C I 45 A C FSM FFSB0665B = Specific Device Code Current (HalfSine Pulse) t = 8.3 ms P Power Dissipation T = 25C P 61 W C tot ORDERING INFORMATION T = 150C 10 C See detailed ordering and shipping information on page 2 of Operating Junction and Storage Temperature T , T 55 to C J stg this data sheet. Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: August, 2020 Rev. 1 FFSB0665BF085/DFFSB0665B F085 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, JunctiontoCase, Max. R 2.46 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit ON CHARACTERISTICS Forward Voltage V I = 6.0 A, T = 25C 1.38 1.7 V F F J I = 6.0 A, T = 125C 1.53 2.0 F J I = 6.0 A, T = 175C 1.67 2.4 F J Reverse Current I V = 650 V, T = 25C 0.5 40 A R R J V = 650 V, T = 125C 1.0 80 R J V = 650 V, T = 175C 2.0 160 R J CHARGES, CAPACITANCES & GATE RESISTANCE Total Capacitive Charge Q V = 400 V 16 nC C C C V = 1 V, f = 100 kHz 259 pF tot R V = 200 V, f = 100 kHz 29 R V = 400 V, f = 100 kHz 22 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity 2 FFSB0665BF085 FFSB0665B D PAK Tape & Reel 330 mm 24 mm 800 Units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2