Silicon Carbide Schottky Diode 650 V, 4 A FFSD0465A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1, 2, 4. Cathode 3. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features 4 Max Junction Temperature 175C Avalanche Rated 25 mJ 2 1 High Surge Current Capacity 3 Positive Temperature Coefficient DPAK3 (TO252, 3 LD) Ease of Paralleling CASE 369AS No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS MARKING DIAGRAM Compliant Applications Y&Z&3&K General Purpose FFS SMPS, Solar Inverter, UPS D0465A Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit Y = ON Semiconductor Logo V Peak Repetitive Reverse Voltage 650 V RRM &Z = Assembly Plant Code &3 = Numeric Date Code E Single Pulse Avalanche Energy (Note 1) 25 mJ AS &K = Lot Code I Continuous Rectified Forward Current T < 160C 4 A F C FFSD0465A = Specific Device Code Continuous Rectified Forward Current T < 135C 7.6 C I NonRepetitive Peak Forward T = 25C, 10 s 360 A F, Max C ORDERING INFORMATION Surge Current T = 150C, 10 s 330 A See detailed ordering and shipping information on page 2 of C this data sheet. 38 A I NonRepetitive Forward Surge HalfSine Pulse, F, SM Current t = 8.3 ms P 18 A I Repetitive Forward Surge HalfSine Pulse, F, RM Current t = 8.3 ms P Ptot Power Dissipation T = 25C 61 W C T = 150C 10 W C T ,T Operating and Storage Temperature Range 55 to C J STG +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 25 mJ is based on starting T = 25C, L = 0.5 mH, I = 10 A, V = 50 V AS J AS Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2020 Rev. 4 FFSD0465A/DFFSD0465A THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 2.46 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 4 A, T = 25C 1.50 1.75 V F F C I = 4 A, T = 125C 1.6 2.0 F C I = 4 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 16 nC C C Total Capacitance V = 1 V, f = 100 kHz 258 pF R V = 200 V, f = 100 kHz 29 R V = 400 V, f = 100 kHz 21 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping* FFSD0465A FFSD0465A DPAK3 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) J 6 10 4 3 7 10 2 T = 175C T = 55C J J 8 10 T = 25C J T = 75C 1 J T = 125C J T = 75C J T = 25C J T = 175C T = 125C J T = 55C J J 9 0 10 200 300 400 500 600 650 0.0 0.5 1.0 1.5 2.0 V , REVERSE VOLTAGE (V) V , FORWARD VOLTAGE (V) R F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics www.onsemi.com 2 I , FORWARD CURRENT (A) F I , REVERSE CURRENT (A) R