Silicon Carbide Schottky Diode 1200 V, 20 A FFSB20120A-F085 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1.,3. Cathode 2. Anode power semiconductor. System benefits include highest efficiency, Schottky Diode faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 3 Avalanche Rated 200 mJ 1 High Surge Current Capacity 2 Positive Temperature Coefficient 2 D PAK2 (TO2632L) Ease of Paralleling CASE 418BK No Reverse Recovery/No Forward Recovery AECQ101 qualified MARKING DIAGRAM Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Y&Z&3&K FFSB 20120A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSB20120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2020 Rev. 1 FFSB20120AF085/DFFSB20120A F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Ratings Unit V V Peak Repetitive Reverse Voltage 1200 RRM mJ E Single Pulse Avalanche Energy (Note 1) 200 AS A I 20 Continuous Rectified Forward Current T < 157C F C Continuous Rectified Forward Current T < 135C 32 C A T = 25C, 10 s I NonRepetitive Peak Forward Surge Current 1190 F, Max C T = 150C, 10 s 990 C A I HalfSine Pulse, tp = 8.3 ms 135 NonRepetitive Forward Surge Current F, SM A HalfSine Pulse, tp = 8.3 ms I Repetitive Forward Surge Current 74 F, RM W T = 25C Ptot Power Dissipation 333 C W T = 150C 55 C C T , T Operating and Storage Temperature Range 55 to +175 J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W R Thermal Resistance, Junction to Case, Max 0.45 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping FFSB20120AF085 FFSB20120A D2PAK 800 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ. Max. Unit V Forward Voltage I = 20 A, T = 25C 1.45 1.75 V F F C I = 20 A, T = 125C 1.7 2 F C I = 20 A, T = 175C 2 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 120 nC C C Total Capacitance V = 1 V, f = 100 kHz 1220 pF R V = 400 V, f = 100 kHz 111 R V = 800 V, f = 100 kHz 88 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. E of 200 mJ is based on starting T = 25C, L = 0.5 mH, I = 29 A, V = 50 V. AS J AS www.onsemi.com 2