Silicon Carbide Schottky Diode 650 V, 4 A FFSB0465A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of ELECTRICAL CONNECTION power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 1, 3 Cathode 2. Anode Avalanche Rated 25 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling 3 No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS 1 Compliant 2 Applications 2 D PAK2 (TO2632L) General Purpose CASE 418BK SMPS, Solar Inverter, UPS Power Switching Circuits MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter FFSB0465A Unit V Peak Repetitive Reverse Voltage 650 V RRM Y&Z&3&K E Single Pulse Avalanche Energy (Note 1) 25 mJ FFSB AS 0465A I Continuous Rectified Forward Current 4 A F T < 160C C Continuous Rectified Forward Current 7.7 T < 135C C I NonRepetitive T = 25C, 10 s 360 A F, Max C Peak Forward 330 T = 150C, 10 s Y = ON Semiconductor Logo Surge Current C &Z = Assembly Plant Code I NonRepetitive HalfSine Pulse, 38 A F, SM &3 = Numeric Date Code Forward t = 8.3 ms p &K = Lot Code Surge Current FFSB0465A = Specific Device Code I Repetitive Forward HalfSine Pulse, 18 A F, RM Surge Current t = 8.3 ms p P Power Dissipation T = 25C 63 W tot C ORDERING INFORMATION T = 150C 10.5 C See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. T , T Operating and Storage Temperature Range 55 to +175 J STG C 1. E of 25 mJ is based on starting T = 25C, L = 0.5 mH, I = 10 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2019 Rev. 3 FFSB0465A/DFFSB0465A THERMAL CHARACTERISTICS Symbol Parameter Unit Ratings C/W R Thermal Resistance, Junction to Case, Max. 2.38 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSB0465A FFSB0465A D2PAK Tape/Reel N/A N/A 800 Units For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 4 A, T = 25C 1.50 1.75 V F F C I = 4 A, T = 125C 1.6 2.0 F C I = 4 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 16 nC C C Total Capacitance V = 1 V, f = 100 kHz 258 pF R V = 200 V, f = 100 kHz 29 R V = 400 V, f = 100 kHz 21 R www.onsemi.com 2