STEALTH Diode 50 A, 600 V FFH50US60S-F085 Description The FFH50US60SF085 is a STEALTH diode optimized for low loss performance in output rectification. The STEALTH family www.onsemi.com exhibits low reverse recovery current(I ),low V and soft recovery RR F under typical operating conditions. It has a low forwardvoltage drop and is of silicon nitride passivated. This device is intended for use as a freewheel/clamping diode invarious automotive switching power supplies and other power switching applications. Its low stored charge as well as Stealth and soft recovery characteristics minimize ringing and electrical noise while reduce the overall power loss. ANODE Features CATHODE Stealth Recovery, t = 163 ns ( Typ.) I = 50 A) rr F TO2472L Low Forward Voltage( V = 1.69 V (Max.) I = 50 A ) F F Avalanche Energy Rated AECQ101 Qualified MARKING DIAGRAM This Device is PbFree Applications Y&Z&3&K Automotive DCDC Converter 50US60S Automotive On Board Charger Switching Power Supply Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Y = ON Semiconductor Logo Working Peak Reverse Voltage V 600 V RWM &Z = Assembly Plant Code &3 = Numeric Date Code DC Blocking Voltage V 600 V R &K = Lot Code Average Rectified Forward Current I 50 A F(AV) 50US60S = Specific Device Code (T = 25 C) C Nonrepetitive Peak Surge Current I 150 A FSM (Halfwave 1 Phase 50 Hz) Avalanche Energy E 20 mJ AVL (1 A, 40 mH) 1. Cathode 2. Anode Operating Junction and Storage T T 55 to C J, STG Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 2 of assumed, damage may occur and reliability may be affected. this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: March, 2020 Rev. 4 FFH50US60SF085/DFFH50US60S F085 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity FFH50US60S FFH50US60SF085 TO2472L 30 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 175C 1000 A C V Instantaneous Forward Voltage I = 50 A T = 25C 1.27 1.69 V FM F C (Note 1) T = 175C C 1.19 1.57 V I = 1 A, T = 25C t Reverse Recovery Time F C 41 82 ns rr di/dt = 200 A/ s, (Note 2) V = 390 V R I = 50 A, T = 25C F C 163 ns di/dt = 200 A/ s, V = 390 V T = 175C C 364 ns R ta Reverse Recovery Time I = 50 A, T = 25C 65 ns F C tb di/dt = 200 A/ s, 98 ns Q Reverse Recovery Charge V = 390 V 886 nC rr R 1. Pulse : Test Pulse width = 300 s, Duty Cycle = 2% 2. Guaranteed by design Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TEST CIRCUITS AND WAVEFORMS V AMPLITUDE AND GE R CONTROL dl /dt G F L t AND t CONTROL I 1 2 F DUT CURRENT dI F T rr SENSE R I G F dt + t t a b V GE 0 V DD IGBT t 1 0.25I RM t 2 I RM Figure 1. T Test Circuit Figure 2. T Waveforms and Definitions rr rr I = 1 A L = 40 mH R < 0.1 2 E = 1/2LI V /(V V ) AVL R(AVL) R(AVL) DD Q = IGBT (BV > DUT V ) V 1 CES R(AVL) AVL LR + CURRENT I I L L V SENSE DD I V Q 1 V DD DUT t t t t 0 1 2 Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 2