333 3 MURS140, MURS160 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES Available Glass passivated pellet chip junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB (DO-214AA) AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.0 A F(AV) Case: SMB (DO-214AA) V 400 V, 600 V RRM Molding compound meets UL 94 V-0 flammability rating I 35 A FSM Base P/N-E3 - RoHS-compliant, commercial grade t 50 ns rr Base P/NHE3 X - RoHS-compliant, AEC-Q101 qualified V 1.05 V ( X denotes revision code e.g. A, B,.....) F T max. 175 C J Terminals: matte tin plated leads, solderable per Package SMB (DO-214AA) J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MURS140 MURS160 UNIT Device marking code MG MJ Maximum repetitive peak reverse voltage V 400 600 RRM Working peak reverse voltage V 400 600 V RWM Maximum DC blocking voltage V 400 600 DC T = 150 C 1.0 L Maximum average forward rectified current at (Fig. 1) I F(AV) T = 125 C 2.0 L A Peak forward surge current 8.3 ms single half sine-wave I 35 FSM superimposed on rated load Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 08-Apr-2020 Document Number: 88688 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DMURS140, MURS160 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS MURS140 MURS160 UNIT T = 25 C 1.25 J (1) Maximum instantaneous forward voltage V I = 1.0 A V F F T = 150 C 1.05 J T = 25 C 5.0 Maximum instantaneous reverse current at J (2) I Rated V A R R DC blocking voltage T = 150 C 150 J I = 0.5 A, I = 1.0 A, I = 0.25 A 50 F R rr Maximum reverse recovery time t rr I = 1.0 A, dI/dt = 50 A/s, F 75 V = 30 V, I = 10 % I ns R rr RM I = 1.0 A, dI/dt = 100 A/s, F Maximum forward recovery time t 50 fr recovery to 1.0 V Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MURS140 MURS160 UNIT Typical thermal resistance, junction to lead R 13 C/W JL ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MURS160-E3/52T 0.096 52T 750 7 diameter plastic tape and reel MURS160-E3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel (1) MURS160HE3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) MURS160HE3 A/I 0.096 I 3200 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Apr-2020 Document Number: 88688 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000