Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS FEATURES Low CTR degradation Good CTR linearity depending on forward A 1 4 C current Isolation test voltage, 5300 V RMS C 2 3 E High collector emitter voltage, V = 70 V CEO Low saturation voltage i179060 1 Fast switching times i179060 Temperature stable Low coupling capacitance DESCRIPTION End stackable, 0.100 (2.54 mm) spacing The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation High common mode interference immunity (unconnected voltage. These couplers have a GaAs infrared emitting diode base) emitter, which is optically coupled to a silicon planar Material categorization: For definitions of compliance phototransistor detector, and is incorporated in a plastic please see www.vishay.com/doc 99912 DIP-4 package. AGENCY APPROVALS The coupling devices are designed for signal transmission between two electrically separated circuits. UL1577, file no. E52744 system code H or J, double The couplers are end-stackable with 2.54 mm lead spacing. protection Creepage and clearance distances of > 8 mm are achieved DIN EN 60747-5-5 (VDE 0884) available with option 1 with option 6. This version complies with 60950 BSI IEC 60950 IEC 60065 (DIN VDE 0805) for reinforced insulation up to operation voltage of 400 V or DC. RMS ORDERING INFORMATION PART REMARKS SFH615AA CTR 50 % to 600 %, DIP-4 SFH615AB CTR 80 % to 260 %, DIP-4 SFH615ABL CTR 200 % to 600 %, DIP-4 SFH615ABM CTR 200 % to 400 %, DIP-4 SFH615AGB CTR 100 % to 600 %, DIP-4 SFH615AGR CTR 100 % to 300 %, DIP-4 SFH615AY CTR 50 % to 150 %, DIP-4 SFH615AA-X006 CTR 50 % to 600 %, DIP-4 400 mil (option 6) SFH615AA-X007 CTR 50 % to 600 %, SMD-4 (option 7) SFH615ABM-X006 CTR 200 % to 400 %, DIP-4 400 mil (option 6) SFH615ABM-X007 CTR 200 % to 400 %, SMD-4 (option 7) SFH615AGB-X006 CTR 100 % to 600 %, DIP-4 400 mil (option 6) SFH615AGB-X009 CTR 100 % to 600 %, SMD-4 (option 9) SFH615AGR-X006 CTR 100 % to 300 %, DIP-4 400 mil (option 6) SFH615AGR-X007 CTR 100 % to 300 %, SMD-4 (option 7) SFH615AY-X006 CTR 50 % to 150 %, DIP-4 400 mil (option 6) SFH615AY-X008 CTR 50 % to 150 %,SMD-4 (option 8) SFH615AY-X009 CTR 50 % to 150 %,SMD-4 (option 9) Note For additional information on the available options refer to option information. Rev. 1.9, 23-May-13 Document Number: 83672 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R DC forward current I 60 mA F Surge forward current t 10 ms I 2.5 A P FSM Power dissipation P 100 mW diss OUTPUT Collector emitter voltage V 70 V CE Emitter collector voltage V 7V EC I 50 mA C Collector current t 10 ms I 100 mA P C Total power dissipation P 150 mW diss COUPLER Isolation test voltage V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Isolation thickness between emitter and detector Comparative tracking CTI 175 index per DIN IEC 112/VDE 0303, part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature range T - 55 to + 150 C stg Ambient temperature range T - 55 to + 100 C amb max. 10 s, dip soldering distance (1) Soldering temperature T 260 C sld to seating plane 1.5 mm Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.25 1.65 V F F Reverse current V = 6 V I 0.01 10 A R R Capacitance V = 0 V, f = 1 MHz C 13 pF R O Thermal resistance R 750 K/W thja OUTPUT Collector emitter capacitance V = 5 V, f = 1 MHz C 5.2 pF CE CE Thermal resistance R 500 K/W thja Collector emitter saturation I = 10 mA, I = 2.5 mA V 0.25 0.4 V F C CEsat voltage Coupling capacitance C 0.4 pF C COUPLER SFH615AA I 10 100 nA CEO SFH615AGB I 10 100 nA CEO SFH615AGR I 10 100 nA CEO Collector emitter leakage V = 10 V SFH615ABM I 10 100 nA CEO CEO current SFH615ABL I 10 100 nA CEO SFH615AY I 10 100 nA CEO SFH615AB I 10 100 nA CEO Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.9, 23-May-13 Document Number: 83672 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000