SFH620AA, SFH620AGB www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, 5300 V RMS FEATURES High current transfer ratios - at 5 mA: 50 to 600 % A/C 1 4 C - at 1.0 mA: 45 % typical (> 13) Low CTR degradation C/A 2 3 E Good CTR linearity depending on forward current Isolation test voltage, 5300 V RMS i179062-1 High collector emitter voltage, V = 70 V CEO Low saturation voltage Fast switching times DESCRIPTION Temperature stable The SFH620AA, SFH620AGB features a high current Low coupling capacitance transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode End stackable, 0.100 (2.54 mm) spacing emitter, which is optically coupled to a silicon planar High common mode interference immunity (unconnected phototransistor detector, and is incorporated in a plastic base) DIP-4 package. SMD option, see SFH620A, SFH6206 datasheet The coupling devices are designed for signal transmission Material categorization: for definitions of compliance between two electrically separated circuits. please see www.vishay.com/doc 99912 The couplers are end-stackable with 2.54 mm lead spacing. This version complies with IEC 60950 (DIN VDE 0805) for AGENCY APPROVALS reinforced insulation up to an operation voltage of 400 V RMS UL1577, file no. E52744 system code H, double protection or DC. CSA 93751 BSI IEC 60950 IEC 60065 VDE 0884-5, DIN EN 60747-5-5, available with option 1 ORDERING INFORMATION DIP-4 SF H 6 2 0 A x x - X 0 0 1 PART NUMBER PACKAGE OPTION 7.62 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, CSA, BSI 50 to 600 100 to 600 DIP-4 SFH620AA SFH620AGB VDE, UL, CSA, BSI 50 to 600 100 to 600 DIP-4 - SFH620AGB-X001 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current I 60 mA F Surge forward current t 1.0 s I 2.5 A p FSM Total power dissipation P 100 mW diss OUTPUT Collector emitter voltage V 70 V CE Emitter collector voltage V 7V EC I 50 mA C Collector current t 1.0 ms I 100 mA p C Power dissipation P 150 mW diss Rev. 1.8, 19-Nov-14 Document Number: 83676 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SFH620AA, SFH620AGB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolation test voltage V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Insulation thickness between 0.4 mm emitter and detector Comparative tracking index per CTI 175 DIN IEC 112/VDE 0303 part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T -55 to +150 C stg Ambient temperature T -55 to +100 C amb Junction temperature T 100 C j max. 10 s, dip soldering distance (1) Soldering temperature T 260 C sld to seating plane 1.5 mm Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.25 1.65 V F F Capacitance V = 0 V, f = 1 MHz C 50 pF R O Thermal resistance R 750 K/W thja OUTPUT Collector emitter capacitance V = 5 V, f = 1 MHz C 6.8 pF CE CE Thermal resistance R 500 K/W thja COUPLER Collector emitter saturation voltage I = 10 mA, I = 2.5 mA V 0.25 0.4 V F C CEsat Coupling capacitance C 0.2 pF C SFH620AA I 10 100 nA CEO Collector emitter leakage current V = 10 V CE SFH620AGB I 10 100 nA CEO Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SFH620AA 50 600 % I /I I = 5 mA, V = 5 V CTR C F F CE SFH620AGB 100 600 % Rev. 1.8, 19-Nov-14 Document Number: 83676 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000