SFH620AA/ SFH620AGB Vishay Semiconductors Optocoupler, AC Input, 5300 V RMS Features High Current Transfer Ratios A/C C 1 4 at 5 mA: 50-600 % 3 E C/A 2 at 1.0 mA: 45 % typical (> 13) Low CTR Degradation Good CTR Linearity Depending on Forward Current Isolation Test Voltage, 5300 V RMS Pb High Collector-emitter Voltage, V = 70 V e3 CEO i179062 Pb-free Low Saturation Voltage Fast Switching Times Temperature Stable emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorpo- Low Coupling Capacitance rated in a plastic DIP-4 package. End-stackable, .100(2.54 mm) Spacing The coupling devices are designed for signal trans- High Common-mode Interference Immunity mission between two electrically separated circuits. (Unconnected Base) The couplers are end-stackable with 2.54 mm lead SMD Option, See SFH620A/SFH6206 Data Sheet spacing. Lead-free component Creepage and clearance distances of > 8.0 mm are Component in accordance to RoHS 2002/95/EC achieved with option 6. This version complies with and WEEE 2002/96/EC IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V or DC. RMS Agency Approvals UL1577, File No. E52744 System Code H or J, Order Information Double Protection Part Remarks DIN EN 60747-5-2 (VDE0884) SFH620AA CTR 50 - 600 %, DIP-4 DIN EN 60747-5-5 pending Available with Option 1 SFH620AGB CTR 100 - 600 %, DIP-4 CSA 93751 SFH620AA-X009 CTR 50 - 600 %, SMD-4 (option 9) BSI IEC60950 IEC60065 SFH620AGB-X007 CTR 100 - 600 %, SMD-4 (option 7) SFH620AGB-X009 CTR 100 - 600 %, SMD-4 (option 9) Description For additional information on the available options refer to Option Information. The SFH620AA/ SFH620AGB features a high current transfer ratio, low coupling capacitance and high iso- lation voltage. These couplers have a GaAs infrared Document Number 83676 www.vishay.com Rev. 1.4, 26-Oct-04 1SFH620AA/ SFH620AGB VISHAY Vishay Semiconductors Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Reverse voltage V 6.0 V R DC Forward current I 60 mA F Surge forward current t 10 sI 2.5 A p FSM Total power dissipation P 100 mW diss Output Parameter Test condition Symbol Value Unit Collector-emitter voltage V 70 V CE Emitter-collector voltage V 7.0 V EC Collector current I 50 mA C t 1.0 ms I 100 mA p C Power dissipation P 150 mW diss Coupler Parameter Test condition Symbol Value Unit Isolation test voltage (between V 5300 V ISO RMS emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) Creepage 7.0 mm Clearance 7.0 mm Insulation thickness between 0.4 mm emitter and detector Comparative tracking index per 175 DIN IEC 112/VDE0 303, part 1 12 Isolation resistance V = 500 V, T = 25 C R IO amb IO 10 11 V = 500 V, T = 100 C R IO amb IO 10 Storage temperature T - 55 to + 150 C stg Ambient temperature T - 55 to + 100 C amb Junction temperature T 100 C j Soldering temperature max. 10 s. Dip Soldering T 260 C sld distance to seating plane 1.5 mm www.vishay.com Document Number 83676 2 Rev. 1.4, 26-Oct-04